Additive Ion Implantation in Gallium Arsenide by Forming Alloy Nanoclusters
Тип публикации: Journal Article
Дата публикации: 2023-06-01
scimago Q4
wos Q4
БС3
SJR: 0.162
CiteScore: 0.8
Impact factor: 0.3
ISSN: 20751133, 2075115X
General Materials Science
General Engineering
Краткое описание
The research deals with effects of ion implantation using protons at energy of 30 keV and dose of 3 × 1013 ions/cm2, ion-implanted doping element (sulfur) at energy of 75 keV and dose of (1–6) × 1014 ions/cm2, sulfur ions at energy of 30 keV and dose of 4 × 1016 ions/cm2, and annealing in a carbon-containing atmosphere (CO2) at 500°С on the characteristics of monocrystalline gallium arsenide. The authors propose a mechanism aimed to increase electron mobility in the surface layer to 4500–5000 cm2/(V s) based on the gas phase nanocluster synthesis during proton irradiation and subsequent filling of the bulk of the structure with sulfur ions, including activation annealing under a layer of nonporous carbon coating synthesized by the ions accelerated into a carbon-containing atmosphere. The proposed method promotes new possibilities for ion implantation to be applied in monolithic microwave integrated circuit (MMIC) design and technology.
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Inorganic Materials: Applied Research
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Pleiades Publishing
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Perinskaya I. V. et al. Additive Ion Implantation in Gallium Arsenide by Forming Alloy Nanoclusters // Inorganic Materials: Applied Research. 2023. Vol. 14. No. 3. pp. 604-609.
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Perinskaya I. V., Perinsky V. V., Rodionov I. V., Kuts L. E. Additive Ion Implantation in Gallium Arsenide by Forming Alloy Nanoclusters // Inorganic Materials: Applied Research. 2023. Vol. 14. No. 3. pp. 604-609.
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TY - JOUR
DO - 10.1134/s2075113323030334
UR - https://link.springer.com/10.1134/S2075113323030334
TI - Additive Ion Implantation in Gallium Arsenide by Forming Alloy Nanoclusters
T2 - Inorganic Materials: Applied Research
AU - Perinskaya, I V
AU - Perinsky, V V
AU - Rodionov, I V
AU - Kuts, L E
PY - 2023
DA - 2023/06/01
PB - Pleiades Publishing
SP - 604-609
IS - 3
VL - 14
SN - 2075-1133
SN - 2075-115X
ER -
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@article{2023_Perinskaya,
author = {I V Perinskaya and V V Perinsky and I V Rodionov and L E Kuts},
title = {Additive Ion Implantation in Gallium Arsenide by Forming Alloy Nanoclusters},
journal = {Inorganic Materials: Applied Research},
year = {2023},
volume = {14},
publisher = {Pleiades Publishing},
month = {jun},
url = {https://link.springer.com/10.1134/S2075113323030334},
number = {3},
pages = {604--609},
doi = {10.1134/s2075113323030334}
}
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Perinskaya, I. V., et al. “Additive Ion Implantation in Gallium Arsenide by Forming Alloy Nanoclusters.” Inorganic Materials: Applied Research, vol. 14, no. 3, Jun. 2023, pp. 604-609. https://link.springer.com/10.1134/S2075113323030334.