Additive Ion Implantation in Gallium Arsenide by Forming Alloy Nanoclusters

The research deals with effects of ion implantation using protons at energy of 30 keV and dose of 3 × 1013 ions/cm2, ion-implanted doping element (sulfur) at energy of 75 keV and dose of (1–6) × 1014 ions/cm2, sulfur ions at energy of 30 keV and dose of 4 × 1016 ions/cm2, and annealing in a carbon-containing atmosphere (CO2) at 500°С on the characteristics of monocrystalline gallium arsenide. The authors propose a mechanism aimed to increase electron mobility in the surface layer to 4500–5000 cm2/(V s) based on the gas phase nanocluster synthesis during proton irradiation and subsequent filling of the bulk of the structure with sulfur ions, including activation annealing under a layer of nonporous carbon coating synthesized by the ions accelerated into a carbon-containing atmosphere. The proposed method promotes new possibilities for ion implantation to be applied in monolithic microwave integrated circuit (MMIC) design and technology.