Semiconductors, volume 39, issue 9, pages 1066
Exciton States in Semiconductor Spherical Nanostructures
1
Ilyichevsk Scientific Training Center, Mechnikov Odessa National University, Ilyichevsk, Ukraine
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Publication type: Journal Article
Publication date: 2005-09-19
Journal:
Semiconductors
Q4
Q4
SJR: 0.173
CiteScore: 1.5
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
The results of theoretical studies of the energy spectra of excitons moving in semiconductor spherical quantum dots are described. The contributions of the kinetic electron and hole energies, the energy of the Coulomb interaction between an electron and hole, and the energy of the polarization interaction between them to the energy spectrum of an exciton in a quantum dot with a spherical (quantum dot)-(insulator medium) interface is analyzed.
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RIS
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TY - JOUR
DO - 10.1134/1.2042600
UR - https://doi.org/10.1134/1.2042600
TI - Exciton States in Semiconductor Spherical Nanostructures
T2 - Semiconductors
AU - Pokutnyi, S I
PY - 2005
DA - 2005/09/19
PB - Pleiades Publishing
SP - 1066
IS - 9
VL - 39
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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@article{2005_Pokutnyi,
author = {S I Pokutnyi},
title = {Exciton States in Semiconductor Spherical Nanostructures},
journal = {Semiconductors},
year = {2005},
volume = {39},
publisher = {Pleiades Publishing},
month = {sep},
url = {https://doi.org/10.1134/1.2042600},
number = {9},
pages = {1066},
doi = {10.1134/1.2042600}
}
Cite this
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Pokutnyi, S. I.. “Exciton States in Semiconductor Spherical Nanostructures.” Semiconductors, vol. 39, no. 9, Sep. 2005, p. 1066. https://doi.org/10.1134/1.2042600.