Pleiades Publishing
Inorganic Materials
,  volume 49 ,  issue 9 ,  pages 878-882

Information reliability evaluation of a Ge2Sb2Te 5-based phase change memory cell

Publication type: Journal Article
Publication date: 2013-08-08
Pleiades Publishing
scimago Q4
wos Q4
SJR: 0.183
CiteScore: 1.3
Impact factor: 0.7
ISSN: 00201685, 16083172
Materials Chemistry
Metals and Alloys
Inorganic Chemistry
General Chemical Engineering
Abstract
The information reliability of phase change memory cells at different ambient temperatures has been assessed for the first time. The statistical approach chosen is based on A.N. Kolmogorov’s heuristic theory, which describes the kinetics of isothermal crystallization. We have analyzed the influence of the phase change memory cell size and critical size of crystalline nuclei, which depends on the physicochemical parameters of the material and temperature. The results demonstrate that the information reliability of phase change memory cells of typical dimensions can be sufficiently high up to 100°C. Calculation results are compared to available experimental data.
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Egarmin K. N., Voronkov É. N., Kozyukhin S. A. Information reliability evaluation of a Ge2Sb2Te 5-based phase change memory cell // Inorganic Materials. 2013. Vol. 49. No. 9. pp. 878-882.
GOST all authors (up to 50) Copy
Egarmin K. N., Voronkov É. N., Kozyukhin S. A. Information reliability evaluation of a Ge2Sb2Te 5-based phase change memory cell // Inorganic Materials. 2013. Vol. 49. No. 9. pp. 878-882.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1134/S0020168513090057
UR - https://doi.org/10.1134/S0020168513090057
TI - Information reliability evaluation of a Ge2Sb2Te 5-based phase change memory cell
T2 - Inorganic Materials
AU - Egarmin, K N
AU - Voronkov, É N
AU - Kozyukhin, S A
PY - 2013
DA - 2013/08/08
PB - Pleiades Publishing
SP - 878-882
IS - 9
VL - 49
SN - 0020-1685
SN - 1608-3172
ER -
BibTex |
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BibTex (up to 50 authors) Copy
@article{2013_Egarmin,
author = {K N Egarmin and É N Voronkov and S A Kozyukhin},
title = {Information reliability evaluation of a Ge2Sb2Te 5-based phase change memory cell},
journal = {Inorganic Materials},
year = {2013},
volume = {49},
publisher = {Pleiades Publishing},
month = {aug},
url = {https://doi.org/10.1134/S0020168513090057},
number = {9},
pages = {878--882},
doi = {10.1134/S0020168513090057}
}
MLA
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MLA Copy
Egarmin, K. N., et al. “Information reliability evaluation of a Ge2Sb2Te 5-based phase change memory cell.” Inorganic Materials, vol. 49, no. 9, Aug. 2013, pp. 878-882. https://doi.org/10.1134/S0020168513090057.