Ultrafast electron dynamics on the silicon surface excited by an intense femtosecond laser pulse
A. A. Ionin
1
,
S. I. Kudryashov
1
,
S.V. Makarov
1
,
P N Saltuganov
1
,
L V Seleznev
1
,
D V Sinitsyn
1
,
A. R. Sharipov
1
Publication type: Journal Article
Publication date: 2012-11-24
scimago Q3
wos Q3
SJR: 0.312
CiteScore: 2.3
Impact factor: 1.3
ISSN: 00213640, 10906487
Physics and Astronomy (miscellaneous)
Abstract
The electron dynamics on the silicon surface during the pump ultrashort infrared laser pulse is studied by time-resolved optical microscopy and electron-emission measurements. It is found that the optical response of the material under the conditions where a dense electron-hole plasma is formed is determined by the renormalization of the band spectrum of the material rather than by intraband transitions of photoexcited carriers. Nonlinear Auger recombination in the plasma enhanced by the plasma-induced renormalization of the band gap and accompanied by the generation of hot charge carriers stimulates intense prompt emission of such carriers from the surface of the photoexcited material, whose work function decreases owing to the large plasma-induced renormalization of the energies of higher conduction bands.
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Total citations:
24
Citations from 2024:
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(4%)
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GOST
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Ionin A. A. et al. Ultrafast electron dynamics on the silicon surface excited by an intense femtosecond laser pulse // JETP Letters. 2012. Vol. 96. No. 6. pp. 375-379.
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Ionin A. A., Kudryashov S. I., Makarov S., Saltuganov P. N., Seleznev L. V., Sinitsyn D. V., Sharipov A. R. Ultrafast electron dynamics on the silicon surface excited by an intense femtosecond laser pulse // JETP Letters. 2012. Vol. 96. No. 6. pp. 375-379.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1134/S002136401218004X
UR - https://doi.org/10.1134/S002136401218004X
TI - Ultrafast electron dynamics on the silicon surface excited by an intense femtosecond laser pulse
T2 - JETP Letters
AU - Ionin, A. A.
AU - Kudryashov, S. I.
AU - Makarov, S.V.
AU - Saltuganov, P N
AU - Seleznev, L V
AU - Sinitsyn, D V
AU - Sharipov, A. R.
PY - 2012
DA - 2012/11/24
PB - Pleiades Publishing
SP - 375-379
IS - 6
VL - 96
SN - 0021-3640
SN - 1090-6487
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2012_Ionin,
author = {A. A. Ionin and S. I. Kudryashov and S.V. Makarov and P N Saltuganov and L V Seleznev and D V Sinitsyn and A. R. Sharipov},
title = {Ultrafast electron dynamics on the silicon surface excited by an intense femtosecond laser pulse},
journal = {JETP Letters},
year = {2012},
volume = {96},
publisher = {Pleiades Publishing},
month = {nov},
url = {https://doi.org/10.1134/S002136401218004X},
number = {6},
pages = {375--379},
doi = {10.1134/S002136401218004X}
}
Cite this
MLA
Copy
Ionin, A. A., et al. “Ultrafast electron dynamics on the silicon surface excited by an intense femtosecond laser pulse.” JETP Letters, vol. 96, no. 6, Nov. 2012, pp. 375-379. https://doi.org/10.1134/S002136401218004X.
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