Structural and electrical characteristics of a hyperdoped silicon surface layer with deep donor sulfur states
A. A. Ionin
1
,
S. I. Kudryashov
1, 2
,
S.V. Makarov
1
,
N. N. Melnik
1
,
A. A. Rudenko
1
,
P N Saltuganov
1, 3
,
L V Seleznev
1
,
D V Sinitsyn
1
,
I A Timkin
1, 2
,
R A Khmelnitskiy
1
2
3
National Research University MFTI, Dolgoprudnyi, Moscow region, Russia
|
Publication type: Journal Article
Publication date: 2014-09-12
scimago Q3
wos Q3
SJR: 0.312
CiteScore: 2.3
Impact factor: 1.3
ISSN: 00213640, 10906487
Physics and Astronomy (miscellaneous)
Abstract
Inhomogeneous hyperdoping of a 100-nm-thick silicon surface layer with sulfur atoms at concentrations above 2 × 1021 cm−3 was obtained via its femtosecond laser ablation in a sulfur-containing organic solvent. Infrared transmission spectroscopy reveals distinct interband absorption peaks of donor sulfur states, which are absent in the initial crystalline silicon, and a broad absorption band of free carriers with a concentration of ∼1018 cm−3. The rather low free-carrier concentration is related to equilibrium room-temperature ionization of localized donor sulfur states, preserving their nondegenerate character owing to the strong electronion binding in the donor states.
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GOST
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Ionin A. A. et al. Structural and electrical characteristics of a hyperdoped silicon surface layer with deep donor sulfur states // JETP Letters. 2014. Vol. 100. No. 1. pp. 55-58.
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Ionin A. A., Kudryashov S. I., Makarov S., Melnik N. N., Rudenko A. A., Saltuganov P. N., Seleznev L. V., Sinitsyn D. V., Timkin I. A., Khmelnitskiy R. A. Structural and electrical characteristics of a hyperdoped silicon surface layer with deep donor sulfur states // JETP Letters. 2014. Vol. 100. No. 1. pp. 55-58.
Cite this
RIS
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TY - JOUR
DO - 10.1134/S0021364014130062
UR - https://doi.org/10.1134/S0021364014130062
TI - Structural and electrical characteristics of a hyperdoped silicon surface layer with deep donor sulfur states
T2 - JETP Letters
AU - Ionin, A. A.
AU - Kudryashov, S. I.
AU - Makarov, S.V.
AU - Melnik, N. N.
AU - Rudenko, A. A.
AU - Saltuganov, P N
AU - Seleznev, L V
AU - Sinitsyn, D V
AU - Timkin, I A
AU - Khmelnitskiy, R A
PY - 2014
DA - 2014/09/12
PB - Pleiades Publishing
SP - 55-58
IS - 1
VL - 100
SN - 0021-3640
SN - 1090-6487
ER -
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BibTex (up to 50 authors)
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@article{2014_Ionin,
author = {A. A. Ionin and S. I. Kudryashov and S.V. Makarov and N. N. Melnik and A. A. Rudenko and P N Saltuganov and L V Seleznev and D V Sinitsyn and I A Timkin and R A Khmelnitskiy},
title = {Structural and electrical characteristics of a hyperdoped silicon surface layer with deep donor sulfur states},
journal = {JETP Letters},
year = {2014},
volume = {100},
publisher = {Pleiades Publishing},
month = {sep},
url = {https://doi.org/10.1134/S0021364014130062},
number = {1},
pages = {55--58},
doi = {10.1134/S0021364014130062}
}
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MLA
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Ionin, A. A., et al. “Structural and electrical characteristics of a hyperdoped silicon surface layer with deep donor sulfur states.” JETP Letters, vol. 100, no. 1, Sep. 2014, pp. 55-58. https://doi.org/10.1134/S0021364014130062.
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