Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure
Publication type: Journal Article
Publication date: 2020-02-01
scimago Q3
wos Q3
SJR: 0.312
CiteScore: 2.3
Impact factor: 1.3
ISSN: 00213640, 10906487
Physics and Astronomy (miscellaneous)
Abstract
Recently, it has been found that “closed” nanopores with connected edges lying in neighboring layers can be formed in films consisting of one-to-five-layer graphene flakes irradiated by electrons or heavy ions. In the latter case, a significant change in the transport properties of such modified films from the semimetallic to semiconductor behavior is observed. However, the complete understanding of the mechanism of this transition has not been achieved. A mechanism of such behavior proposed in this work is based on the formation of several graphene layers topologically connected by several nearly located closed nanopores. In this case, the pronounced curvature of graphene layers disturbs the semimetallic character of the spectrum in this system.
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Chernozatonskii L. A. et al. Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure // JETP Letters. 2020. Vol. 111. No. 4. pp. 235-238.
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Chernozatonskii L. A., Antipina L. Yu., Kvashnin D. G. Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure // JETP Letters. 2020. Vol. 111. No. 4. pp. 235-238.
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TY - JOUR
DO - 10.1134/S0021364020040074
UR - https://doi.org/10.1134/S0021364020040074
TI - Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure
T2 - JETP Letters
AU - Chernozatonskii, L A
AU - Antipina, L Yu
AU - Kvashnin, D G
PY - 2020
DA - 2020/02/01
PB - Pleiades Publishing
SP - 235-238
IS - 4
VL - 111
SN - 0021-3640
SN - 1090-6487
ER -
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BibTex (up to 50 authors)
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@article{2020_Chernozatonskii,
author = {L A Chernozatonskii and L Yu Antipina and D G Kvashnin},
title = {Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure},
journal = {JETP Letters},
year = {2020},
volume = {111},
publisher = {Pleiades Publishing},
month = {feb},
url = {https://doi.org/10.1134/S0021364020040074},
number = {4},
pages = {235--238},
doi = {10.1134/S0021364020040074}
}
Cite this
MLA
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Chernozatonskii, L. A., et al. “Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure.” JETP Letters, vol. 111, no. 4, Feb. 2020, pp. 235-238. https://doi.org/10.1134/S0021364020040074.