JETP Letters, издание 111, том 4, номера страниц: 235-238

Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure

Тип публикации: Journal Article
Дата публикации: 2020-02-01
Pleiades Publishing
Pleiades Publishing
Журнал:  JETP Letters
Квартиль SCImago: Q2
Квартиль WOS: Q4
Impact factor: 1.3
ISSN: 00213640, 10906487
Physics and Astronomy (miscellaneous)
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Recently, it has been found that “closed” nanopores with connected edges lying in neighboring layers can be formed in films consisting of one-to-five-layer graphene flakes irradiated by electrons or heavy ions. In the latter case, a significant change in the transport properties of such modified films from the semimetallic to semiconductor behavior is observed. However, the complete understanding of the mechanism of this transition has not been achieved. A mechanism of such behavior proposed in this work is based on the formation of several graphene layers topologically connected by several nearly located closed nanopores. In this case, the pronounced curvature of graphene layers disturbs the semimetallic character of the spectrum in this system.
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1. Chernozatonskii L.A., Antipina L.Y., Kvashnin D.G. Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure // JETP Letters. 2020. Т. 111. № 4. С. 235–238.
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TY - JOUR

DO - 10.1134/s0021364020040074

UR - http://dx.doi.org/10.1134/S0021364020040074

TI - Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure

T2 - JETP Letters

AU - Chernozatonskii, L. A.

AU - Antipina, L. Yu.

AU - Kvashnin, D. G.

PY - 2020

DA - 2020/02

PB - Pleiades Publishing Ltd

SP - 235-238

IS - 4

VL - 111

SN - 0021-3640

SN - 1090-6487

ER -

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@article{2020,

doi = {10.1134/s0021364020040074},

url = {https://doi.org/10.1134%2Fs0021364020040074},

year = 2020,

month = {feb},

publisher = {Pleiades Publishing Ltd},

volume = {111},

number = {4},

pages = {235--238},

author = {L. A. Chernozatonskii and L. Yu. Antipina and D. G. Kvashnin},

title = {Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure}

}

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Chernozatonskii, L. A., L. Yu. Antipina, and D. G. Kvashnin. “Transition Mechanism from Semimetallic to Semiconductor Behavior in a Graphene Film at the Formation of a Multiply Connected Structure.” JETP Letters 111.4 (2020): 235–238. Crossref. Web.