Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition

The possibility of using electroluminescence to study Si–Ta2O5 and Si–SiO2–Ta2O5 structures and obtain information on the electronic structure of the Ta2O5 layer and on the properties of the SiO2–Ta2O5 interface is shows. A model of the electronic structure of the Ta2O5 layer formed by molecular layer deposition is proposed, which explains the spectral distribution of luminescence independently of the method of its excitation. It is shown that the formation of a Ta2O5 layer on the surface of thermally oxidized silicon is accompanied by transformation in the near-surface SiO2 layer and by quenching of the luminescence band in the spectral region of 650 nm.