Properties of planar Nb/α-Si/Nb Josephson junctions with various degrees of doping of the α-Si layer
Тип публикации: Journal Article
Дата публикации: 2012-05-01
SCImago Q4
WOS Q3
БС2
SJR: 0.206
CiteScore: 2.2
Impact factor: 0.8
ISSN: 10637761, 10906509
General Physics and Astronomy
Краткое описание
The properties of Nb/α-Si/Nb planar Josephson junctions with various degrees of doping of the amorphous silicon layer are experimentally studied. Tungsten is used as a doping impurity. The properties of the Josephson junctions are shown to change substantially when the degree of doping of the α-Si layer changes: a current transport mechanism and the shape of the current-voltage characteristic of the junctions change. Josephson junctions with SNS-type conduction are formed in the case of a fully degenerate α-Si layer. The properties of such junctions are described by a classical resistive model. Josephson junctions with a resonance mechanism of current transport through impurity centers are formed at a lower degree of doping of the α-Si layer. The high-frequency properties of such junctions are shown to change. The experimental results demonstrate that these junctions are close to SINIS-type Josephson junctions.
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Gudkov A. L., Kupriyanov M. Yu., SAMUS A. N. Properties of planar Nb/α-Si/Nb Josephson junctions with various degrees of doping of the α-Si layer // Journal of Experimental and Theoretical Physics. 2012. Vol. 114. No. 5. pp. 818-829.
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Gudkov A. L., Kupriyanov M. Yu., SAMUS A. N. Properties of planar Nb/α-Si/Nb Josephson junctions with various degrees of doping of the α-Si layer // Journal of Experimental and Theoretical Physics. 2012. Vol. 114. No. 5. pp. 818-829.
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TY - JOUR
DO - 10.1134/S1063776112030144
UR - https://doi.org/10.1134/S1063776112030144
TI - Properties of planar Nb/α-Si/Nb Josephson junctions with various degrees of doping of the α-Si layer
T2 - Journal of Experimental and Theoretical Physics
AU - Gudkov, A L
AU - Kupriyanov, M Yu
AU - SAMUS, A. N.
PY - 2012
DA - 2012/05/01
PB - Pleiades Publishing
SP - 818-829
IS - 5
VL - 114
SN - 1063-7761
SN - 1090-6509
ER -
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@article{2012_Gudkov,
author = {A L Gudkov and M Yu Kupriyanov and A. N. SAMUS},
title = {Properties of planar Nb/α-Si/Nb Josephson junctions with various degrees of doping of the α-Si layer},
journal = {Journal of Experimental and Theoretical Physics},
year = {2012},
volume = {114},
publisher = {Pleiades Publishing},
month = {may},
url = {https://doi.org/10.1134/S1063776112030144},
number = {5},
pages = {818--829},
doi = {10.1134/S1063776112030144}
}
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Gudkov, A. L., et al. “Properties of planar Nb/α-Si/Nb Josephson junctions with various degrees of doping of the α-Si layer.” Journal of Experimental and Theoretical Physics, vol. 114, no. 5, May. 2012, pp. 818-829. https://doi.org/10.1134/S1063776112030144.
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