Semiconductors

, том 41 , издание 11 , страницы 1323-1328

Excition states in semiconductor quantum dots in the modified effective mass approximation

S I Pokutnyi ¹

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Kurdyumov Institute of the Physics of Metals, National Academy of Sciences of Ukraine, Ilyichevsk, Ukraine |

Тип публикации: Journal Article

Дата публикации: 2007-11-08

Pleiades Publishing

Semiconductors

scimago Q4

wos Q4

БС3

SJR: 0.154

CiteScore: 0.9

Impact factor: 0.6

ISSN: 10637826, 10906479, 17267315, 09412751

DOI: 10.1134/s1063782607110097

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Electronic, Optical and Magnetic Materials

Atomic and Molecular Physics, and Optics

Condensed Matter Physics

Краткое описание

A new modified effective mass approximation is suggested to describe the excitonic energy spectrum of quantum dots of radii a comparable to the exciton Bohr radius a ex 0 . It is shown that, for quantum dots simulated by infinitely deep potential wells, the effective mass approximation is appropriate for describing excitons in quantum dots of radii a ≈ a ex 0 , if the reduced effective mass of the excitons, μ, is considered as a function of the radius of the quantum dot a, μ = μ(a).

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Физический институт им. П.Н. Лебедева РАН

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Московский педагогический государственный университет

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Pokutnyi S. I. Excition states in semiconductor quantum dots in the modified effective mass approximation // Semiconductors. 2007. Vol. 41. No. 11. pp. 1323-1328.

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Pokutnyi S. I. Excition states in semiconductor quantum dots in the modified effective mass approximation // Semiconductors. 2007. Vol. 41. No. 11. pp. 1323-1328.

RIS |

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TY - JOUR

DO - 10.1134/s1063782607110097

UR - https://doi.org/10.1134/s1063782607110097

TI - Excition states in semiconductor quantum dots in the modified effective mass approximation

T2 - Semiconductors

AU - Pokutnyi, S I

PY - 2007

DA - 2007/11/08

PB - Pleiades Publishing

SP - 1323-1328

IS - 11

VL - 41

SN - 1063-7826

SN - 1090-6479

SN - 1726-7315

SN - 0941-2751

ER -

BibTex |

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@article{2007_Pokutnyi,

author = {S I Pokutnyi},

title = {Excition states in semiconductor quantum dots in the modified effective mass approximation},

journal = {Semiconductors},

year = {2007},

volume = {41},

publisher = {Pleiades Publishing},

month = {nov},

url = {https://doi.org/10.1134/s1063782607110097},

number = {11},

pages = {1323--1328},

doi = {10.1134/s1063782607110097}

}

MLA

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MLA Скопировать

Pokutnyi, S. I.. “Excition states in semiconductor quantum dots in the modified effective mass approximation.” Semiconductors, vol. 41, no. 11, Nov. 2007, pp. 1323-1328. https://doi.org/10.1134/s1063782607110097.

Издатель

Pleiades Publishing

Журнал

Semiconductors

scimago Q4

wos Q4

БС3

SJR

0.154

CiteScore

0.9

Impact factor

0.6

ISSN

10637826 (Print)

10906479 (Electronic)

17267315 (Print)

09412751 (Print)