Exchange enhancement of the g factor in InAs/AlSb heterostructures
V. Ya. Aleshkin
1
,
V. I. Gavrilenko
1
,
A V Ikonnikov
1
,
S. S. Krishtopenko
1
,
Yu.G Sadofyev
1
,
K. E. Spirin
1
Publication type: Journal Article
Publication date: 2008-07-10
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
The evolution of the Shubnikov-de Haas oscillations in InAs/AlSb heterostructures with twodimensional electron gas in InAs quantum wells 12–18 nm wide with considerable variation in the electron concentration (3–8) × 1011 cm−2 due to the effect of negative persistent photoconductivity is studied. The values of the effective Landé factor for electrons g* = −(15–35) are determined. It is shown that the value of the g* factor increases as the quantum well width increases.
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Total citations:
32
Citations from 2025:
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(3.13%)
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GOST
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Aleshkin V. et al. Exchange enhancement of the g factor in InAs/AlSb heterostructures // Semiconductors. 2008. Vol. 42. No. 7. pp. 828-833.
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Aleshkin V., Gavrilenko V. I., Ikonnikov A. V., Krishtopenko S. S., Sadofyev Y., Spirin K. E. Exchange enhancement of the g factor in InAs/AlSb heterostructures // Semiconductors. 2008. Vol. 42. No. 7. pp. 828-833.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1134/S1063782608070129
UR - https://doi.org/10.1134/S1063782608070129
TI - Exchange enhancement of the g factor in InAs/AlSb heterostructures
T2 - Semiconductors
AU - Aleshkin, V. Ya.
AU - Gavrilenko, V. I.
AU - Ikonnikov, A V
AU - Krishtopenko, S. S.
AU - Sadofyev, Yu.G
AU - Spirin, K. E.
PY - 2008
DA - 2008/07/10
PB - Pleiades Publishing
SP - 828-833
IS - 7
VL - 42
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2008_Aleshkin,
author = {V. Ya. Aleshkin and V. I. Gavrilenko and A V Ikonnikov and S. S. Krishtopenko and Yu.G Sadofyev and K. E. Spirin},
title = {Exchange enhancement of the g factor in InAs/AlSb heterostructures},
journal = {Semiconductors},
year = {2008},
volume = {42},
publisher = {Pleiades Publishing},
month = {jul},
url = {https://doi.org/10.1134/S1063782608070129},
number = {7},
pages = {828--833},
doi = {10.1134/S1063782608070129}
}
Cite this
MLA
Copy
Aleshkin, V. Ya., et al. “Exchange enhancement of the g factor in InAs/AlSb heterostructures.” Semiconductors, vol. 42, no. 7, Jul. 2008, pp. 828-833. https://doi.org/10.1134/S1063782608070129.
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