volume 47 issue 13 pages 1711-1714

Diagnostics of γ-irradiated Si-SiO2 structures by the cathodoluminescence method

Publication typeJournal Article
Publication date2013-12-16
scimago Q4
wos Q4
SJR0.154
CiteScore0.9
Impact factor0.6
ISSN10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
The specific features of application of the cathodoluminescence (CL) method for the diagnostics of Si-SiO2 structures, related to the possibility of forming luminescence centers directly when recording CL spectra, are considered. The CL efficiency is shown by the example of the effect of γ irradiation on the properties of Si-SiO2. A model of the breakup of Si-OH groups in the oxide layer as a result of γ irradiation is proposed and confirmed by independent electrical measurements.
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Baraban A. P. et al. Diagnostics of γ-irradiated Si-SiO2 structures by the cathodoluminescence method // Semiconductors. 2013. Vol. 47. No. 13. pp. 1711-1714.
GOST all authors (up to 50) Copy
Baraban A. P., Dmitriev V., PETROV Y. V., Timofeeva K. A. Diagnostics of γ-irradiated Si-SiO2 structures by the cathodoluminescence method // Semiconductors. 2013. Vol. 47. No. 13. pp. 1711-1714.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1134/S1063782613130022
UR - https://doi.org/10.1134/S1063782613130022
TI - Diagnostics of γ-irradiated Si-SiO2 structures by the cathodoluminescence method
T2 - Semiconductors
AU - Baraban, A P
AU - Dmitriev, V.A.
AU - PETROV, YU. V.
AU - Timofeeva, K A
PY - 2013
DA - 2013/12/16
PB - Pleiades Publishing
SP - 1711-1714
IS - 13
VL - 47
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2013_Baraban,
author = {A P Baraban and V.A. Dmitriev and YU. V. PETROV and K A Timofeeva},
title = {Diagnostics of γ-irradiated Si-SiO2 structures by the cathodoluminescence method},
journal = {Semiconductors},
year = {2013},
volume = {47},
publisher = {Pleiades Publishing},
month = {dec},
url = {https://doi.org/10.1134/S1063782613130022},
number = {13},
pages = {1711--1714},
doi = {10.1134/S1063782613130022}
}
MLA
Cite this
MLA Copy
Baraban, A. P., et al. “Diagnostics of γ-irradiated Si-SiO2 structures by the cathodoluminescence method.” Semiconductors, vol. 47, no. 13, Dec. 2013, pp. 1711-1714. https://doi.org/10.1134/S1063782613130022.