Pleiades Publishing
Semiconductors
,  том 48 ,  издание 1 ,  страницы 99-103

Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission

Тип публикации: Journal Article
Дата публикации: 2014-01-04
Pleiades Publishing
scimago Q4
wos Q4
БС3
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Краткое описание
The results of studying single laser diodes and arrays in the spectral range of 900–1060 nm, fabricated based on InGaAs/AlGaAs epitaxially integrated heterostructures are presented. It is shown that the use of InGaAs/AlGaAs epitaxially integrated heterostructures allows the development of laser emitters with increased power and brightness, operating in the short pulse mode. The results of studying the characteristics of laser-diode arrays (LDAs) fabricated using these heterostructures are presented.
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Konyaev V. et al. Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission // Semiconductors. 2014. Vol. 48. No. 1. pp. 99-103.
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Konyaev V., Marmalyuk A., Ladugin M. A., Bagaev T. A., Zverkov M., Krichevsky V. V., Padalitsa A., Sapozhnikov S. M., Simakov V. A. Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission // Semiconductors. 2014. Vol. 48. No. 1. pp. 99-103.
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TY - JOUR
DO - 10.1134/S1063782614010175
UR - https://doi.org/10.1134/S1063782614010175
TI - Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission
T2 - Semiconductors
AU - Konyaev, V.P.
AU - Marmalyuk, A.A.
AU - Ladugin, M A
AU - Bagaev, T A
AU - Zverkov, M.V.
AU - Krichevsky, V V
AU - Padalitsa, A.A.
AU - Sapozhnikov, S M
AU - Simakov, V A
PY - 2014
DA - 2014/01/04
PB - Pleiades Publishing
SP - 99-103
IS - 1
VL - 48
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
BibTex |
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@article{2014_Konyaev,
author = {V.P. Konyaev and A.A. Marmalyuk and M A Ladugin and T A Bagaev and M.V. Zverkov and V V Krichevsky and A.A. Padalitsa and S M Sapozhnikov and V A Simakov},
title = {Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission},
journal = {Semiconductors},
year = {2014},
volume = {48},
publisher = {Pleiades Publishing},
month = {jan},
url = {https://doi.org/10.1134/S1063782614010175},
number = {1},
pages = {99--103},
doi = {10.1134/S1063782614010175}
}
MLA
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Konyaev, V.P., et al. “Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission.” Semiconductors, vol. 48, no. 1, Jan. 2014, pp. 99-103. https://doi.org/10.1134/S1063782614010175.