Pleiades Publishing
Semiconductors
,  volume 50 ,  issue 11 ,  pages 1425-1430

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

Publication type: Journal Article
Publication date: 2016-11-05
Pleiades Publishing
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields.
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GOST |
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GOST Copy
Balagula R. M. et al. Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields // Semiconductors. 2016. Vol. 50. No. 11. pp. 1425-1430.
GOST all authors (up to 50) Copy
Balagula R. M., Vinnichenko M. Ya., Makhov I. S., FIRSOV D. A., VOROBJEV L. E. Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields // Semiconductors. 2016. Vol. 50. No. 11. pp. 1425-1430.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1134/S106378261611004X
UR - https://doi.org/10.1134/S106378261611004X
TI - Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields
T2 - Semiconductors
AU - Balagula, R M
AU - Vinnichenko, M Ya
AU - Makhov, I S
AU - FIRSOV, D. A.
AU - VOROBJEV, L. E.
PY - 2016
DA - 2016/11/05
PB - Pleiades Publishing
SP - 1425-1430
IS - 11
VL - 50
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2016_Balagula,
author = {R M Balagula and M Ya Vinnichenko and I S Makhov and D. A. FIRSOV and L. E. VOROBJEV},
title = {Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields},
journal = {Semiconductors},
year = {2016},
volume = {50},
publisher = {Pleiades Publishing},
month = {nov},
url = {https://doi.org/10.1134/S106378261611004X},
number = {11},
pages = {1425--1430},
doi = {10.1134/S106378261611004X}
}
MLA
Cite this
MLA Copy
Balagula, R. M., et al. “Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields.” Semiconductors, vol. 50, no. 11, Nov. 2016, pp. 1425-1430. https://doi.org/10.1134/S106378261611004X.