Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2 Te3 chalcogenide semiconductors
A. A. Sherchenkov
1
,
S A Kozyukhin
2
,
P I Lazarenko
1
,
A. V. BABICH
1
,
N. A. Bogoslovskiy
3
,
I V Sagunova
1
,
E. N. Redichev
1
Publication type: Journal Article
Publication date: 2017-02-09
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors Ge2Sb2Te5, GeSb2Te5, and GeSb4Te7 are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb2Te3, which is important for targeted optimization of the phase change memory technology.
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Sherchenkov A. A. et al. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors // Semiconductors. 2017. Vol. 51. No. 2. pp. 146-152.
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Sherchenkov A. A., Kozyukhin S. A., Lazarenko P. I., BABICH A. V., Bogoslovskiy N. A., Sagunova I. V., Redichev E. N. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors // Semiconductors. 2017. Vol. 51. No. 2. pp. 146-152.
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TY - JOUR
DO - 10.1134/S1063782617020191
UR - https://doi.org/10.1134/S1063782617020191
TI - Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors
T2 - Semiconductors
AU - Sherchenkov, A. A.
AU - Kozyukhin, S A
AU - Lazarenko, P I
AU - BABICH, A. V.
AU - Bogoslovskiy, N. A.
AU - Sagunova, I V
AU - Redichev, E. N.
PY - 2017
DA - 2017/02/09
PB - Pleiades Publishing
SP - 146-152
IS - 2
VL - 51
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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@article{2017_Sherchenkov,
author = {A. A. Sherchenkov and S A Kozyukhin and P I Lazarenko and A. V. BABICH and N. A. Bogoslovskiy and I V Sagunova and E. N. Redichev},
title = {Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors},
journal = {Semiconductors},
year = {2017},
volume = {51},
publisher = {Pleiades Publishing},
month = {feb},
url = {https://doi.org/10.1134/S1063782617020191},
number = {2},
pages = {146--152},
doi = {10.1134/S1063782617020191}
}
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MLA
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Sherchenkov, A. A., et al. “Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors.” Semiconductors, vol. 51, no. 2, Feb. 2017, pp. 146-152. https://doi.org/10.1134/S1063782617020191.