том 51 издание 8 страницы 1021-1023

Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method

V D Demcheglo 1
A.I. Voronin 1
N. Yu. Tabachkova, 1
V. T. Bublik 1
V F Ponomaryov 2
Тип публикацииJournal Article
Дата публикации2017-08-24
scimago Q4
wos Q4
БС3
SJR0.154
CiteScore0.9
Impact factor0.6
ISSN10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Краткое описание
The property anisotropy in Bi2Se0.3Te2.7 alloy is analyzed by constructing index surfaces for the thermoelectric figure of merit and thermal expansion coefficient. Texture is an important factor forming the property anisotropy and technological applicability of an ingot for fabricating modules. The property anisotropy is analyzed based on studying the texture in ingots produced by the modified Bridgman method (thermoelectric plate growth in a flat cavity). Analysis of the texture shows that not only the crystallization rate, but also the crystallization cavity design is an important factor for the proposed crystallization method, affecting the formation of the thermoelectric-material structure. As the plate thickness is decreased by changing the heat removal conditions in a thin gap, a more perfect structure can be obtained.
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Journal of Electronic Materials
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Modern Electronic Materials
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Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
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AIP Conference Proceedings
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Demcheglo V. D. et al. Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method // Semiconductors. 2017. Vol. 51. No. 8. pp. 1021-1023.
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Demcheglo V. D., Voronin A., Tabachkova, N. Y., Bublik V. T., Ponomaryov V. F. Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method // Semiconductors. 2017. Vol. 51. No. 8. pp. 1021-1023.
RIS |
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TY - JOUR
DO - 10.1134/S1063782617080085
UR - http://link.springer.com/10.1134/S1063782617080085
TI - Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method
T2 - Semiconductors
AU - Demcheglo, V D
AU - Voronin, A.I.
AU - Tabachkova,, N. Yu.
AU - Bublik, V. T.
AU - Ponomaryov, V F
PY - 2017
DA - 2017/08/24
PB - Pleiades Publishing
SP - 1021-1023
IS - 8
VL - 51
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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@article{2017_Demcheglo,
author = {V D Demcheglo and A.I. Voronin and N. Yu. Tabachkova, and V. T. Bublik and V F Ponomaryov},
title = {Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method},
journal = {Semiconductors},
year = {2017},
volume = {51},
publisher = {Pleiades Publishing},
month = {aug},
url = {http://link.springer.com/10.1134/S1063782617080085},
number = {8},
pages = {1021--1023},
doi = {10.1134/S1063782617080085}
}
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Demcheglo, V. D., et al. “Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method.” Semiconductors, vol. 51, no. 8, Aug. 2017, pp. 1021-1023. http://link.springer.com/10.1134/S1063782617080085.