Tight-binding simulation of silicon and germanium nanocrystals
Publication type: Journal Article
Publication date: 2017-10-06
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.
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Total citations:
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Citations from 2024:
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(33.33%)
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GOST
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Gert A. V. et al. Tight-binding simulation of silicon and germanium nanocrystals // Semiconductors. 2017. Vol. 51. No. 10. pp. 1274-1289.
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Gert A. V., NESTOKLON M. O., Prokofiev A. A., YASSIEVICH I. N. Tight-binding simulation of silicon and germanium nanocrystals // Semiconductors. 2017. Vol. 51. No. 10. pp. 1274-1289.
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RIS
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TY - JOUR
DO - 10.1134/s1063782617100098
UR - https://doi.org/10.1134/s1063782617100098
TI - Tight-binding simulation of silicon and germanium nanocrystals
T2 - Semiconductors
AU - Gert, A V
AU - NESTOKLON, M. O.
AU - Prokofiev, A. A.
AU - YASSIEVICH, I. N.
PY - 2017
DA - 2017/10/06
PB - Pleiades Publishing
SP - 1274-1289
IS - 10
VL - 51
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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BibTex (up to 50 authors)
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@article{2017_Gert,
author = {A V Gert and M. O. NESTOKLON and A. A. Prokofiev and I. N. YASSIEVICH},
title = {Tight-binding simulation of silicon and germanium nanocrystals},
journal = {Semiconductors},
year = {2017},
volume = {51},
publisher = {Pleiades Publishing},
month = {oct},
url = {https://doi.org/10.1134/s1063782617100098},
number = {10},
pages = {1274--1289},
doi = {10.1134/s1063782617100098}
}
Cite this
MLA
Copy
Gert, A. V., et al. “Tight-binding simulation of silicon and germanium nanocrystals.” Semiconductors, vol. 51, no. 10, Oct. 2017, pp. 1274-1289. https://doi.org/10.1134/s1063782617100098.