Semiconductors, volume 51, issue 10, pages 1274-1289
Tight-binding simulation of silicon and germanium nanocrystals
1
Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
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Publication type: Journal Article
Publication date: 2017-10-06
Journal:
Semiconductors
Q4
Q4
SJR: 0.173
CiteScore: 1.5
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
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Gert A. V. et al. Tight-binding simulation of silicon and germanium nanocrystals // Semiconductors. 2017. Vol. 51. No. 10. pp. 1274-1289.
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Gert A. V., NESTOKLON M. O., Prokofiev A. A., YASSIEVICH I. N. Tight-binding simulation of silicon and germanium nanocrystals // Semiconductors. 2017. Vol. 51. No. 10. pp. 1274-1289.
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TY - JOUR
DO - 10.1134/s1063782617100098
UR - https://doi.org/10.1134/s1063782617100098
TI - Tight-binding simulation of silicon and germanium nanocrystals
T2 - Semiconductors
AU - Gert, A V
AU - NESTOKLON, M. O.
AU - Prokofiev, A. A.
AU - YASSIEVICH, I. N.
PY - 2017
DA - 2017/10/06
PB - Pleiades Publishing
SP - 1274-1289
IS - 10
VL - 51
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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BibTex (up to 50 authors)
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@article{2017_Gert,
author = {A V Gert and M. O. NESTOKLON and A. A. Prokofiev and I. N. YASSIEVICH},
title = {Tight-binding simulation of silicon and germanium nanocrystals},
journal = {Semiconductors},
year = {2017},
volume = {51},
publisher = {Pleiades Publishing},
month = {oct},
url = {https://doi.org/10.1134/s1063782617100098},
number = {10},
pages = {1274--1289},
doi = {10.1134/s1063782617100098}
}
Cite this
MLA
Copy
Gert, A. V., et al. “Tight-binding simulation of silicon and germanium nanocrystals.” Semiconductors, vol. 51, no. 10, Oct. 2017, pp. 1274-1289. https://doi.org/10.1134/s1063782617100098.