Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation
S.A. Yakovlev
1
,
A.V. Ankudinov
1, 2
,
Yu V Vorobyov
3
,
M. M. VORONOV
1
,
S A Kozyukhin
4
,
B.T. Melekh
1
,
A.B. Pevtsov
1
Publication type: Journal Article
Publication date: 2018-05-15
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
Submicron periodic lattices are formed at the surface of phase-change-memory film materials based on the complex chalcogenide Ge2Sb2Te5 when exposed to nanosecond laser pulses. The geometric characteristics and structural properties of laser-induced lattices are studied by optical and atomic-force microscopies and Raman spectroscopy. It is shown that, at appropriately chosen parameters of exposure to laser radiation, it is possible to implement periodic modulation of the refractive index in the structures formed. Modulation is due to the postexposure solidification of grating ridges and valleys in different phase states, whose dielectric constants widely differ from each other. In the vicinity of the maxima of the wavy structure, the amorphous state is mainly formed, whereas in the region of minima, the Ge2Sb2Te5 structure corresponds mainly to the crystalline phase.
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Yakovlev S. et al. Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation // Semiconductors. 2018. Vol. 52. No. 6. pp. 809-815.
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Yakovlev S., Ankudinov A., Vorobyov Yu. V., VORONOV M. M., Kozyukhin S. A., Melekh B., Pevtsov A. Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation // Semiconductors. 2018. Vol. 52. No. 6. pp. 809-815.
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RIS
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TY - JOUR
DO - 10.1134/S1063782618060246
UR - https://doi.org/10.1134/S1063782618060246
TI - Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation
T2 - Semiconductors
AU - Yakovlev, S.A.
AU - Ankudinov, A.V.
AU - Vorobyov, Yu V
AU - VORONOV, M. M.
AU - Kozyukhin, S A
AU - Melekh, B.T.
AU - Pevtsov, A.B.
PY - 2018
DA - 2018/05/15
PB - Pleiades Publishing
SP - 809-815
IS - 6
VL - 52
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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BibTex (up to 50 authors)
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@article{2018_Yakovlev,
author = {S.A. Yakovlev and A.V. Ankudinov and Yu V Vorobyov and M. M. VORONOV and S A Kozyukhin and B.T. Melekh and A.B. Pevtsov},
title = {Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation},
journal = {Semiconductors},
year = {2018},
volume = {52},
publisher = {Pleiades Publishing},
month = {may},
url = {https://doi.org/10.1134/S1063782618060246},
number = {6},
pages = {809--815},
doi = {10.1134/S1063782618060246}
}
Cite this
MLA
Copy
Yakovlev, S.A., et al. āLaser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation.ā Semiconductors, vol. 52, no. 6, May. 2018, pp. 809-815. https://doi.org/10.1134/S1063782618060246.
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