Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
V. V. FEDOROV
1, 2
,
A D Bolshakov
1, 2
,
L N Dvoretckaia
1
,
G A Sapunov
1
,
D. A. Kirilenko
2, 3
,
A M Mozharov
1
,
K Yu Shugurov
1
,
V A Shkoldin
1
,
G. E. Cirlin
1, 2, 3
,
I.S. Mukhin
1, 2
Publication type: Journal Article
Publication date: 2018-12-01
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the several tens up to the 500 nm depending on the growth condition has been observed. Effect of the V/III flux ratio on the growth mechanism, nanowire structure and morphology was studied by means of scanning electron microscopy and high resolution transmission electron microscopy.
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FEDOROV V. V. et al. Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching // Semiconductors. 2018. Vol. 52. No. 16. pp. 2092-2095.
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FEDOROV V. V., Bolshakov A. D., Dvoretckaia L. N., Sapunov G. A., Kirilenko D. A., Mozharov A. M., Shugurov K. Yu., Shkoldin V. A., Cirlin G. E., Mukhin I. Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching // Semiconductors. 2018. Vol. 52. No. 16. pp. 2092-2095.
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TY - JOUR
DO - 10.1134/S106378261816008X
UR - https://doi.org/10.1134/S106378261816008X
TI - Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
T2 - Semiconductors
AU - FEDOROV, V. V.
AU - Bolshakov, A D
AU - Dvoretckaia, L N
AU - Sapunov, G A
AU - Kirilenko, D. A.
AU - Mozharov, A M
AU - Shugurov, K Yu
AU - Shkoldin, V A
AU - Cirlin, G. E.
AU - Mukhin, I.S.
PY - 2018
DA - 2018/12/01
PB - Pleiades Publishing
SP - 2092-2095
IS - 16
VL - 52
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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BibTex (up to 50 authors)
Copy
@article{2018_FEDOROV,
author = {V. V. FEDOROV and A D Bolshakov and L N Dvoretckaia and G A Sapunov and D. A. Kirilenko and A M Mozharov and K Yu Shugurov and V A Shkoldin and G. E. Cirlin and I.S. Mukhin},
title = {Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching},
journal = {Semiconductors},
year = {2018},
volume = {52},
publisher = {Pleiades Publishing},
month = {dec},
url = {https://doi.org/10.1134/S106378261816008X},
number = {16},
pages = {2092--2095},
doi = {10.1134/S106378261816008X}
}
Cite this
MLA
Copy
FEDOROV, V. V., et al. “Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching.” Semiconductors, vol. 52, no. 16, Dec. 2018, pp. 2092-2095. https://doi.org/10.1134/S106378261816008X.