volume 52 issue 16 pages 2092-2095

Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching

V. V. FEDOROV 1, 2
A D Bolshakov 1, 2
L N Dvoretckaia 1
G A Sapunov 1
D. A. Kirilenko 2, 3
A M Mozharov 1
K Yu Shugurov 1
V A Shkoldin 1
G. E. Cirlin 1, 2, 3
I.S. Mukhin 1, 2
Publication typeJournal Article
Publication date2018-12-01
scimago Q4
wos Q4
SJR0.154
CiteScore0.9
Impact factor0.6
ISSN10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the several tens up to the 500 nm depending on the growth condition has been observed. Effect of the V/III flux ratio on the growth mechanism, nanowire structure and morphology was studied by means of scanning electron microscopy and high resolution transmission electron microscopy.
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FEDOROV V. V. et al. Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching // Semiconductors. 2018. Vol. 52. No. 16. pp. 2092-2095.
GOST all authors (up to 50) Copy
FEDOROV V. V., Bolshakov A. D., Dvoretckaia L. N., Sapunov G. A., Kirilenko D. A., Mozharov A. M., Shugurov K. Yu., Shkoldin V. A., Cirlin G. E., Mukhin I. Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching // Semiconductors. 2018. Vol. 52. No. 16. pp. 2092-2095.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1134/S106378261816008X
UR - https://doi.org/10.1134/S106378261816008X
TI - Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
T2 - Semiconductors
AU - FEDOROV, V. V.
AU - Bolshakov, A D
AU - Dvoretckaia, L N
AU - Sapunov, G A
AU - Kirilenko, D. A.
AU - Mozharov, A M
AU - Shugurov, K Yu
AU - Shkoldin, V A
AU - Cirlin, G. E.
AU - Mukhin, I.S.
PY - 2018
DA - 2018/12/01
PB - Pleiades Publishing
SP - 2092-2095
IS - 16
VL - 52
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2018_FEDOROV,
author = {V. V. FEDOROV and A D Bolshakov and L N Dvoretckaia and G A Sapunov and D. A. Kirilenko and A M Mozharov and K Yu Shugurov and V A Shkoldin and G. E. Cirlin and I.S. Mukhin},
title = {Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching},
journal = {Semiconductors},
year = {2018},
volume = {52},
publisher = {Pleiades Publishing},
month = {dec},
url = {https://doi.org/10.1134/S106378261816008X},
number = {16},
pages = {2092--2095},
doi = {10.1134/S106378261816008X}
}
MLA
Cite this
MLA Copy
FEDOROV, V. V., et al. “Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching.” Semiconductors, vol. 52, no. 16, Dec. 2018, pp. 2092-2095. https://doi.org/10.1134/S106378261816008X.