Pleiades Publishing
Semiconductors
,  volume 53 ,  issue 5 ,  pages 624-627

Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides

Publication type: Journal Article
Publication date: 2019-05-23
Pleiades Publishing
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
The transport properties of p-type oxyselenides with the chemical composition Bi1 –xLaxCuSeO (x = 0.02, 0.04, 0.06) are investigated. An analysis of the temperature dependences of the material resistivity and charge-carrier concentration and mobility show that the substitution of La3+ for Bi3+ ions increases the carrier concentration, presumably, due to the generation of holes as a result of the formation of bismuth vacancies with an increase in the degree of substitution.
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Pankratova D. S. et al. Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides // Semiconductors. 2019. Vol. 53. No. 5. pp. 624-627.
GOST all authors (up to 50) Copy
Pankratova D. S., Novitskii A. P., Kuskov K. V., Sergienko I., Leybo D. V., BURKOV A. T., Konstantinov P., Khovaylo V. V. Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides // Semiconductors. 2019. Vol. 53. No. 5. pp. 624-627.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1134/S1063782619050221
UR - http://link.springer.com/10.1134/S1063782619050221
TI - Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides
T2 - Semiconductors
AU - Pankratova, D S
AU - Novitskii, A P
AU - Kuskov, K V
AU - Sergienko, I.A
AU - Leybo, D V
AU - BURKOV, A. T.
AU - Konstantinov, P.P
AU - Khovaylo, V V
PY - 2019
DA - 2019/05/23
PB - Pleiades Publishing
SP - 624-627
IS - 5
VL - 53
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2019_Pankratova,
author = {D S Pankratova and A P Novitskii and K V Kuskov and I.A Sergienko and D V Leybo and A. T. BURKOV and P.P Konstantinov and V V Khovaylo},
title = {Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides},
journal = {Semiconductors},
year = {2019},
volume = {53},
publisher = {Pleiades Publishing},
month = {may},
url = {http://link.springer.com/10.1134/S1063782619050221},
number = {5},
pages = {624--627},
doi = {10.1134/S1063782619050221}
}
MLA
Cite this
MLA Copy
Pankratova, D. S., et al. “Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides.” Semiconductors, vol. 53, no. 5, May. 2019, pp. 624-627. http://link.springer.com/10.1134/S1063782619050221.