Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds
A.I. Voronin
1
,
I A Serhiienko
1
,
Ye Zh Ashim
1
,
V.L. Kurichenko
1
,
A P Novitskii
1
,
T M Inerbaev
2, 3
,
R Umetsu
4
,
Publication type: Journal Article
Publication date: 2019-12-16
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
In this work the results of studying the electrical transport properties of Fe2V1 –xNbxAl1 –yGay (0.1 ≤ x ≤ 0.2 and 0.1 ≤ y ≤ 0.2) are presented. The specimens were fabricated using conventional arc-melting method followed by ball milling and spark plasma sintering. It was shown that dual-site substitution approach may lead to a more noticeable changes in the Seebeck coefficient and the electrical resistivity comparing to single-site substitution. Since such substitution can be assumed as isovalent one, the evolution of the electrical transport properties was mainly attributed to the changes in the band gap and charge carrier mobility values. To testify applicability of computational methods on these samples we have used well-known density functional theory and Boltzmann transport equation solving on one of the samples.
Found
Nothing found, try to update filter.
Found
Nothing found, try to update filter.
Top-30
Journals
|
1
|
|
|
Arabian Journal of Chemistry
1 publication, 100%
|
|
|
1
|
Publishers
|
1
|
|
|
King Saud University
1 publication, 100%
|
|
|
1
|
- We do not take into account publications without a DOI.
- Statistics recalculated weekly.
Are you a researcher?
Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
1
Total citations:
1
Citations from 2025:
0
Cite this
GOST |
RIS |
BibTex |
MLA
Cite this
GOST
Copy
Voronin A. et al. Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds // Semiconductors. 2019. Vol. 53. No. 13. pp. 1856-1859.
GOST all authors (up to 50)
Copy
Voronin A., Serhiienko I. A., Ashim Y. Z., Kurichenko V., Novitskii A. P., Inerbaev T. M., Umetsu R., Khovaylo V. V. Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds // Semiconductors. 2019. Vol. 53. No. 13. pp. 1856-1859.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1134/S1063782619130207
UR - http://link.springer.com/10.1134/S1063782619130207
TI - Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds
T2 - Semiconductors
AU - Voronin, A.I.
AU - Serhiienko, I A
AU - Ashim, Ye Zh
AU - Kurichenko, V.L.
AU - Novitskii, A P
AU - Inerbaev, T M
AU - Umetsu, R
AU - Khovaylo, V V
PY - 2019
DA - 2019/12/16
PB - Pleiades Publishing
SP - 1856-1859
IS - 13
VL - 53
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2019_Voronin,
author = {A.I. Voronin and I A Serhiienko and Ye Zh Ashim and V.L. Kurichenko and A P Novitskii and T M Inerbaev and R Umetsu and V V Khovaylo},
title = {Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds},
journal = {Semiconductors},
year = {2019},
volume = {53},
publisher = {Pleiades Publishing},
month = {dec},
url = {http://link.springer.com/10.1134/S1063782619130207},
number = {13},
pages = {1856--1859},
doi = {10.1134/S1063782619130207}
}
Cite this
MLA
Copy
Voronin, A.I., et al. “Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds.” Semiconductors, vol. 53, no. 13, Dec. 2019, pp. 1856-1859. http://link.springer.com/10.1134/S1063782619130207.