Semiconductor Lateral Spin Device with Half-Metallic Ferromagnet Electrodes

In a semiconductor spin device with electrodes formed from the Fe2NbSn half-metallic ferromagnet film, a spin polarization of PS = 4% of electrons injected into the InSb semiconductor has been obtained. This corresponds to the maximum possible PS value for transparent contacts of a semiconductor and a ferromagnet, in which the polarization is PF = 95%. It is shown that, to ensure the effective injection of spin-polarized electrons from a ferromagnet into a semiconductor, it is necessary to use a ferromagnet with the 100% electron polarization or to form an additional high-resistance layer in the interface.