Journal of Communications Technology and Electronics, volume 65, issue 9, pages 1062-1104
Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis
1
Enterprise “RD&P Center “Orion”, Russian Federation State Research Center, Moscow, Russia
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3
Shvabe JSC, Moscow, Russia
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Publication type: Journal Article
Publication date: 2020-09-18
Q3
Q4
SJR: 0.222
CiteScore: 1.0
Impact factor: 0.4
ISSN: 10642269, 15556557
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Radiation
Abstract
We review the synthesis methods, crystal parameters, and band structure of two-dimensional and quasi-two-dimensional materials, including graphene; group IV‒VIII transition metal dichalcogenides; 2D binary chalcogenides $${{{\text{A}}}^{{{\text{IV}}}}}{{{\text{B}}}^{{{\text{VI}}}}}$$ , $${\text{A}}_{m}^{{{\text{IV}}}}{\text{B}}_{n}^{{{\text{VI}}}}$$ , $${{{\text{A}}}^{{{\text{III}}}}}{{{\text{B}}}^{{{\text{VI}}}}}$$ , $${\text{A}}_{m}^{{{\text{III}}}}{\text{B}}_{n}^{{{\text{VI}}}}$$ , and $${{{\text{A}}}^{{{\text{II}}}}}{{{\text{B}}}^{{{\text{VI}}}}}$$ of group IV, III, and II transition metals; Ti, Zr, Hf, Bi, and Sb trichalcogenides; $${{{\text{A}}}^{{\text{V}}}}{{{\text{B}}}^{{\text{V}}}}$$ (AsN, AsP, PN, SbAs, SbN, SbP) 2D materials; $${{{\text{A}}}^{{{\text{III}}}}}{\text{N}}$$ (A = Al, Ga, In, B) 2D nitrides; monoatomic 2D materials (phosphorene P, plumbene Pb, stanene Sn, germanene Ge, silicene Si, antimonene Sb, arsenene As, bismuthene Bi, borophene B, and octo-nitrogene 8‑N); functionalized graphene and silicon carbide SiC; CO, GeO, and SnO 2D oxides; 2D transitional metal dioxides, Ge, and Sn; 2D trioxides MoO3 and WO3; and transition metal di- and trihalides.
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Ponomarenko V. P. et al. Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis // Journal of Communications Technology and Electronics. 2020. Vol. 65. No. 9. pp. 1062-1104.
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Ponomarenko V. P., Popov V., Popov S. V., Chepurnov E. L. Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis // Journal of Communications Technology and Electronics. 2020. Vol. 65. No. 9. pp. 1062-1104.
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TY - JOUR
DO - 10.1134/s1064226920090090
UR - https://doi.org/10.1134/s1064226920090090
TI - Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis
T2 - Journal of Communications Technology and Electronics
AU - Ponomarenko, V P
AU - Popov, V.S.
AU - Popov, S. V.
AU - Chepurnov, E L
PY - 2020
DA - 2020/09/18
PB - Pleiades Publishing
SP - 1062-1104
IS - 9
VL - 65
SN - 1064-2269
SN - 1555-6557
ER -
Cite this
BibTex (up to 50 authors)
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@article{2020_Ponomarenko,
author = {V P Ponomarenko and V.S. Popov and S. V. Popov and E L Chepurnov},
title = {Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis},
journal = {Journal of Communications Technology and Electronics},
year = {2020},
volume = {65},
publisher = {Pleiades Publishing},
month = {sep},
url = {https://doi.org/10.1134/s1064226920090090},
number = {9},
pages = {1062--1104},
doi = {10.1134/s1064226920090090}
}
Cite this
MLA
Copy
Ponomarenko, V. P., et al. “Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis.” Journal of Communications Technology and Electronics, vol. 65, no. 9, Sep. 2020, pp. 1062-1104. https://doi.org/10.1134/s1064226920090090.
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