Journal of Communications Technology and Electronics, volume 67, issue 9, pages 1134-1151
2D Structures Based Field-Effect Transistors (Review)
1
Enterprise “RD&P Center “Orion”, Russian Federation State Research Center, Moscow, Russia
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3
Shvabe Holding, Moscow, Russia
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Publication type: Journal Article
Publication date: 2022-09-21
Quartile SCImago
Q3
Quartile WOS
Q4
Impact factor: 0.5
ISSN: 10642269, 15556557
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Radiation
Abstract
We review the design and main parameters of field-effect transistors based on 2D structures of transition metal di- and trichalcogenides MoS2, MoSe2, MoTe2, WS2, WSe2, Mo1 ‒ xWxSe2, ZrS2, ZrSe2, HfS2, HfSe2, PtS2, PtSe2, PtTe2, PdSe2, ReS2, ReSe2, HfS3, ZrS3, TiS3, TaSe3, and NbS3, as well as monoatomic phosphorene (2DbP), antimonene (2DSb), arsenene (2DAs), silicene (2DSi), germanene (2DGe), and stanene (2DSn). Field-effect nanotransistors on flexible substrates, tunnel, and single-electron transistors based on van der Waals structures of graphene quantum dots, as well as transistors containing 2D heteropairs Gr‒(h)BN, Gr‒WS2, Gr‒(h)BC2N, Gr‒FGr, SnS2‒WS2, SnSe2‒WSe2, HfS2‒MoS2, PdSe2‒MoS2, and WSe2‒WO3 – x are discussed.
Top-30
Citations by journals
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Russian Chemical Reviews
1 publication, 100%
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Citations by publishers
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 100%
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Ponomarenko V. P. et al. 2D Structures Based Field-Effect Transistors (Review) // Journal of Communications Technology and Electronics. 2022. Vol. 67. No. 9. pp. 1134-1151.
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Ponomarenko V. P., Popov V., Popov S. V. 2D Structures Based Field-Effect Transistors (Review) // Journal of Communications Technology and Electronics. 2022. Vol. 67. No. 9. pp. 1134-1151.
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TY - JOUR
DO - 10.1134/s1064226922090121
UR - https://doi.org/10.1134/s1064226922090121
TI - 2D Structures Based Field-Effect Transistors (Review)
T2 - Journal of Communications Technology and Electronics
AU - Ponomarenko, V P
AU - Popov, V.S.
AU - Popov, S. V.
PY - 2022
DA - 2022/09/21 00:00:00
PB - Pleiades Publishing
SP - 1134-1151
IS - 9
VL - 67
SN - 1064-2269
SN - 1555-6557
ER -
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@article{2022_Ponomarenko,
author = {V P Ponomarenko and V.S. Popov and S. V. Popov},
title = {2D Structures Based Field-Effect Transistors (Review)},
journal = {Journal of Communications Technology and Electronics},
year = {2022},
volume = {67},
publisher = {Pleiades Publishing},
month = {sep},
url = {https://doi.org/10.1134/s1064226922090121},
number = {9},
pages = {1134--1151},
doi = {10.1134/s1064226922090121}
}
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Ponomarenko, V. P., et al. “2D Structures Based Field-Effect Transistors (Review).” Journal of Communications Technology and Electronics, vol. 67, no. 9, Sep. 2022, pp. 1134-1151. https://doi.org/10.1134/s1064226922090121.
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