Nanotechnologies in Russia

, volume 6 , issue 3-4 , pages 227-236

Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

S A Kozyukhin ¹

A. A. Sherchenkov ²

V. M. Novotortsev ¹

S P Timoshenkov ²

Hide authors affiliations Show authors affiliations: 2 affiliations

Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia |

Moscow State Institute of Electronic Engineering (Technical University), Zelenograd, Russia |

Publication type: Journal Article

Publication date: 2011-04-30

Pleiades Publishing

Nanotechnologies in Russia

SJR: —

CiteScore: —

Impact factor: —

ISSN: 19950780, 19950799

DOI: 10.1134/S1995078011020121

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Condensed Matter Physics

General Materials Science

General Engineering

Abstract

Chalcogenide alloys in the Ge-Sb-Te system are examined from the point of view of their application in nonvolatile phase-change random-access memory (PC RAM). An analysis of the physicochemical properties of crystalline compounds and amorphous films on their basis is carried out.

Found

6 citations

Kozyukhin Sergey

🥼 🤝

DSc in Chemistry, professor

196 publications, 1 539 citations, 3 reviews

h-index: 20

Moscow Institute of Physics and Technology

Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences

4 citations

Lazarenko Petr

PhD in Engineering

84 publications, 513 citations

h-index: 14

National Research University of Electronic Technology

Research interests

Condensed matter physics

Laser processing of materials

2 citations

Babich Alexey

PhD in Engineering

38 publications, 208 citations

h-index: 9

National Research University of Electronic Technology

1 citation

Eremenko Igor

DSc in Chemistry, professor, full member of the Russian Academy of Sciences

675 publications, 7 817 citations, 29 reviews

h-index: 35

Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences

1 citation

Kiselev Aleksey

🥼 🤝

PhD in Physics and Mathematics

26 publications, 143 citations, 1 review

h-index: 7

Institute On Laser and Information Technologies

Kurchatov Complex of Crystallography and Photonics of NRC «Kurchatov Institute»

1 citation

Lotin Andrey

PhD in Physics and Mathematics

71 publications, 398 citations

h-index: 12

Institute On Laser and Information Technologies

1 citation

Burtsev Anton

🤝

15 publications, 103 citations

h-index: 6

Institute On Laser and Information Technologies

1 citation

Eliseev Nikolai

🤝

20 publications, 132 citations

h-index: 7

Kurchatov Complex of Crystallography and Photonics of NRC «Kurchatov Institute»

Institute On Laser and Information Technologies

1 citation

Mikhalevsky Vladimir

35 publications, 203 citations

h-index: 9

Institute On Laser and Information Technologies

1 citation

Glukhenkaya Victoria

🥼 🤝

15 publications, 75 citations

h-index: 5

National Research University of Electronic Technology

Research interests

"Smart" materials

Chalcogenide nanomaterials

Laser processing of materials

Photonic integrated circuits

Photonics

Raman spectroscopy

Thin films

1 citation

Terekhov Dmitry

🥼 🤝

21 publications, 35 citations

h-index: 3

National Research University of Electronic Technology

1 citation

Karimov Denis

PhD

122 publications, 1 149 citations, 7 reviews

h-index: 17

Kurchatov Complex of Crystallography and Photonics of NRC «Kurchatov Institute»

1 citation

Prikhodko Alexander

24 publications, 132 citations

h-index: 6

National Research University of Electronic Technology

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GOST Copy

Kozyukhin S. A. et al. Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory // Nanotechnologies in Russia. 2011. Vol. 6. No. 3-4. pp. 227-236.

GOST all authors (up to 50) Copy

Kozyukhin S. A., Sherchenkov A. A., Novotortsev V. M., Timoshenkov S. P. Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory // Nanotechnologies in Russia. 2011. Vol. 6. No. 3-4. pp. 227-236.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1134/S1995078011020121

UR - https://doi.org/10.1134/S1995078011020121

TI - Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

T2 - Nanotechnologies in Russia

AU - Kozyukhin, S A

AU - Sherchenkov, A. A.

AU - Novotortsev, V. M.

AU - Timoshenkov, S P

PY - 2011

DA - 2011/04/30

PB - Pleiades Publishing

SP - 227-236

IS - 3-4

VL - 6

SN - 1995-0780

SN - 1995-0799

ER -

BibTex |

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BibTex (up to 50 authors) Copy

@article{2011_Kozyukhin,

author = {S A Kozyukhin and A. A. Sherchenkov and V. M. Novotortsev and S P Timoshenkov},

title = {Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory},

journal = {Nanotechnologies in Russia},

year = {2011},

volume = {6},

publisher = {Pleiades Publishing},

month = {apr},

url = {https://doi.org/10.1134/S1995078011020121},

number = {3-4},

pages = {227--236},

doi = {10.1134/S1995078011020121}

}

MLA

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MLA Copy

Kozyukhin, S. A., et al. “Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory.” Nanotechnologies in Russia, vol. 6, no. 3-4, Apr. 2011, pp. 227-236. https://doi.org/10.1134/S1995078011020121.

Publisher

Pleiades Publishing

Journal

Nanotechnologies in Russia

SJR

—

CiteScore

—

Impact factor

—

ISSN

19950780 (Print)

19950799 (Electronic)

Labs

Colour Centre IGIС RAS

Profiles

Sergey A Kozyukhin