Nanotechnologies in Russia

, том 6 , издание 3-4 , страницы 227-236

Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

Тип публикации: Journal Article

Дата публикации: 2011-04-30

Pleiades Publishing

Nanotechnologies in Russia

SJR: 0.173

CiteScore: —

Impact factor: 0.8

ISSN: 19950780, 19950799

DOI: 10.1134/S1995078011020121

Скопировать DOI

Condensed Matter Physics

General Materials Science

General Engineering

Краткое описание

Chalcogenide alloys in the Ge-Sb-Te system are examined from the point of view of their application in nonvolatile phase-change random-access memory (PC RAM). An analysis of the physicochemical properties of crystalline compounds and amorphous films on their basis is carried out.

Найдено

Для доступа к списку цитирований публикации необходимо авторизоваться.

Войти с ORCID

Для доступа к списку профилей, цитирующих публикацию, необходимо авторизоваться.

Войти с ORCID

Топ-30

Журналы

	1 2
Semiconductors	Semiconductors, 2, 14.29% Semiconductors 2 публикации, 14.29%
Materials Science in Semiconductor Processing	Materials Science in Semiconductor Processing, 2, 14.29% Materials Science in Semiconductor Processing 2 публикации, 14.29%
Journal of Materials Science: Materials in Electronics	Journal of Materials Science: Materials in Electronics, 1, 7.14% Journal of Materials Science: Materials in Electronics 1 публикация, 7.14%
Proceedings of SPIE - The International Society for Optical Engineering	Proceedings of SPIE - The International Society for Optical Engineering, 1, 7.14% Proceedings of SPIE - The International Society for Optical Engineering 1 публикация, 7.14%
Inorganic Materials	Inorganic Materials, 1, 7.14% Inorganic Materials 1 публикация, 7.14%
2022 4th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE)	2022 4th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE), 1, 7.14% 2022 4th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE) 1 публикация, 7.14%
Journal of Surface Investigation	Journal of Surface Investigation, 1, 7.14% Journal of Surface Investigation 1 публикация, 7.14%
Phase Transitions	Phase Transitions, 1, 7.14% Phase Transitions 1 публикация, 7.14%
NATO Science for Peace and Security Series C: Environmental Security	NATO Science for Peace and Security Series C: Environmental Security, 1, 7.14% NATO Science for Peace and Security Series C: Environmental Security 1 публикация, 7.14%
AIP Conference Proceedings	AIP Conference Proceedings, 1, 7.14% AIP Conference Proceedings 1 публикация, 7.14%
Russian Chemical Reviews	Russian Chemical Reviews, 1, 7.14% Russian Chemical Reviews 1 публикация, 7.14%
Materials	Materials, 1, 7.14% Materials 1 публикация, 7.14%
	1 2

Издатели

	1 2 3 4
Pleiades Publishing	Pleiades Publishing, 4, 28.57% Pleiades Publishing 4 публикации, 28.57%
Springer Nature	Springer Nature, 2, 14.29% Springer Nature 2 публикации, 14.29%
Elsevier	Elsevier, 2, 14.29% Elsevier 2 публикации, 14.29%
SPIE-Intl Soc Optical Eng	SPIE-Intl Soc Optical Eng, 1, 7.14% SPIE-Intl Soc Optical Eng 1 публикация, 7.14%
Institute of Electrical and Electronics Engineers (IEEE)	Institute of Electrical and Electronics Engineers (IEEE), 1, 7.14% Institute of Electrical and Electronics Engineers (IEEE) 1 публикация, 7.14%
Taylor & Francis	Taylor & Francis, 1, 7.14% Taylor & Francis 1 публикация, 7.14%
AIP Publishing	AIP Publishing, 1, 7.14% AIP Publishing 1 публикация, 7.14%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 7.14% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 публикация, 7.14%
MDPI	MDPI, 1, 7.14% MDPI 1 публикация, 7.14%
	1 2 3 4

Мы не учитываем публикации, у которых нет DOI.
Статистика публикаций обновляется еженедельно.

Вы ученый?

Создайте профиль, чтобы получать персональные рекомендации коллег, конференций и новых статей.

Войти с ORCID

Метрики

Цитировать

ГОСТ |

Цитировать

ГОСТ Скопировать

Kozyukhin S. A. et al. Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory // Nanotechnologies in Russia. 2011. Vol. 6. No. 3-4. pp. 227-236.

ГОСТ со всеми авторами (до 50) Скопировать

Kozyukhin S. A., Sherchenkov A. A., Novotortsev V. M., Timoshenkov S. P. Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory // Nanotechnologies in Russia. 2011. Vol. 6. No. 3-4. pp. 227-236.

RIS |

Цитировать

RIS Скопировать

TY - JOUR

DO - 10.1134/S1995078011020121

UR - https://doi.org/10.1134/S1995078011020121

TI - Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

T2 - Nanotechnologies in Russia

AU - Kozyukhin, S A

AU - Sherchenkov, A. A.

AU - Novotortsev, V. M.

AU - Timoshenkov, S P

PY - 2011

DA - 2011/04/30

PB - Pleiades Publishing

SP - 227-236

IS - 3-4

VL - 6

SN - 1995-0780

SN - 1995-0799

ER -

BibTex |

Цитировать

BibTex (до 50 авторов) Скопировать

@article{2011_Kozyukhin,

author = {S A Kozyukhin and A. A. Sherchenkov and V. M. Novotortsev and S P Timoshenkov},

title = {Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory},

journal = {Nanotechnologies in Russia},

year = {2011},

volume = {6},

publisher = {Pleiades Publishing},

month = {apr},

url = {https://doi.org/10.1134/S1995078011020121},

number = {3-4},

pages = {227--236},

doi = {10.1134/S1995078011020121}

}

MLA

Цитировать

MLA Скопировать

Kozyukhin, S. A., et al. “Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory.” Nanotechnologies in Russia, vol. 6, no. 3-4, Apr. 2011, pp. 227-236. https://doi.org/10.1134/S1995078011020121.