Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks
D. V. Lebedev
1
,
A. S. VLASOV
1
,
M.M. Kulagina
1
,
S I Troshkov
1
,
Yu A Guseva
1
,
E. Pelucchi
2
,
A Gocalinska
2
,
G. Juska
2
,
A Yu Romanova
3
,
P A Buriak
3
,
V. I. Smirnov
3
,
A V Shelaev
4
,
V. A. Bykov
4
,
A. M. MINTAIROV
1, 5
Publication type: Journal Article
Publication date: 2018-12-27
scimago Q4
wos Q4
SJR: 0.154
CiteScore: 0.9
Impact factor: 0.6
ISSN: 10637826, 10906479, 17267315, 09412751
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.
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Lebedev D. V. et al. Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks // Semiconductors. 2018. Vol. 52. No. 14. pp. 1894-1897.
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Lebedev D. V., VLASOV A. S., Kulagina M., Troshkov S. I., Guseva Yu. A., Pelucchi E., Gocalinska A., Juska G., Romanova A. Yu., Buriak P. A., Smirnov V. I., Shelaev A. V., Bykov V. A., MINTAIROV A. M. Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks // Semiconductors. 2018. Vol. 52. No. 14. pp. 1894-1897.
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TY - JOUR
DO - 10.1134/s1063782618140166
UR - https://doi.org/10.1134/s1063782618140166
TI - Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks
T2 - Semiconductors
AU - Lebedev, D. V.
AU - VLASOV, A. S.
AU - Kulagina, M.M.
AU - Troshkov, S I
AU - Guseva, Yu A
AU - Pelucchi, E.
AU - Gocalinska, A
AU - Juska, G.
AU - Romanova, A Yu
AU - Buriak, P A
AU - Smirnov, V. I.
AU - Shelaev, A V
AU - Bykov, V. A.
AU - MINTAIROV, A. M.
PY - 2018
DA - 2018/12/27
PB - Pleiades Publishing
SP - 1894-1897
IS - 14
VL - 52
SN - 1063-7826
SN - 1090-6479
SN - 1726-7315
SN - 0941-2751
ER -
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BibTex (up to 50 authors)
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@article{2018_Lebedev,
author = {D. V. Lebedev and A. S. VLASOV and M.M. Kulagina and S I Troshkov and Yu A Guseva and E. Pelucchi and A Gocalinska and G. Juska and A Yu Romanova and P A Buriak and V. I. Smirnov and A V Shelaev and V. A. Bykov and A. M. MINTAIROV},
title = {Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks},
journal = {Semiconductors},
year = {2018},
volume = {52},
publisher = {Pleiades Publishing},
month = {dec},
url = {https://doi.org/10.1134/s1063782618140166},
number = {14},
pages = {1894--1897},
doi = {10.1134/s1063782618140166}
}
Cite this
MLA
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Lebedev, D. V., et al. “Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks.” Semiconductors, vol. 52, no. 14, Dec. 2018, pp. 1894-1897. https://doi.org/10.1134/s1063782618140166.
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