volume 92 issue 7-8 pages 684-689

Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1

Publication typeJournal Article
Publication date2014-07-01
scimago Q3
wos Q3
SJR0.215
CiteScore2.2
Impact factor1.0
ISSN00084204, 12086045
General Physics and Astronomy
Abstract

The influence of Bi doping on the thermal, electrical, and optical properties of Ge2Sb2Te5 thin films was investigated. The existence of two Bi concentration ranges with different influence of dopant on the properties of thin films was established. At low concentrations (0.5–1.0 wt.% of Bi), anomalous deviations of physical properties from monotonous concentration dependences were observed. This effect is explained by the use of percolation theory, where formation of infinite clusters is accompanied by critical phenomena at critical concentrations.

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GOST Copy
Kozyukhin S. et al. Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1 // Canadian Journal of Physics. 2014. Vol. 92. No. 7-8. pp. 684-689.
GOST all authors (up to 50) Copy
Kozyukhin S., Sherchenkov A., Babich A., Lazarenko P., Nguyen H. P., Prikhodko O. Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1 // Canadian Journal of Physics. 2014. Vol. 92. No. 7-8. pp. 684-689.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1139/cjp-2013-0607
UR - https://doi.org/10.1139/cjp-2013-0607
TI - Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1
T2 - Canadian Journal of Physics
AU - Kozyukhin, Sergey
AU - Sherchenkov, Alexey
AU - Babich, Alexey
AU - Lazarenko, Petr
AU - Nguyen, Huy Phuc
AU - Prikhodko, Oleg
PY - 2014
DA - 2014/07/01
PB - Canadian Science Publishing
SP - 684-689
IS - 7-8
VL - 92
SN - 0008-4204
SN - 1208-6045
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2014_Kozyukhin,
author = {Sergey Kozyukhin and Alexey Sherchenkov and Alexey Babich and Petr Lazarenko and Huy Phuc Nguyen and Oleg Prikhodko},
title = {Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1},
journal = {Canadian Journal of Physics},
year = {2014},
volume = {92},
publisher = {Canadian Science Publishing},
month = {jul},
url = {https://doi.org/10.1139/cjp-2013-0607},
number = {7-8},
pages = {684--689},
doi = {10.1139/cjp-2013-0607}
}
MLA
Cite this
MLA Copy
Kozyukhin, Sergey, et al. “Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1.” Canadian Journal of Physics, vol. 92, no. 7-8, Jul. 2014, pp. 684-689. https://doi.org/10.1139/cjp-2013-0607.