Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1
Sergey Kozyukhin
1
,
Alexey Sherchenkov
2
,
Alexey Babich
2
,
Petr Lazarenko
2
,
Huy Phuc Nguyen
1
,
Oleg Prikhodko
3
Publication type: Journal Article
Publication date: 2014-07-01
scimago Q3
wos Q3
SJR: 0.215
CiteScore: 2.2
Impact factor: 1.0
ISSN: 00084204, 12086045
General Physics and Astronomy
Abstract
The influence of Bi doping on the thermal, electrical, and optical properties of Ge2Sb2Te5 thin films was investigated. The existence of two Bi concentration ranges with different influence of dopant on the properties of thin films was established. At low concentrations (0.5–1.0 wt.% of Bi), anomalous deviations of physical properties from monotonous concentration dependences were observed. This effect is explained by the use of percolation theory, where formation of infinite clusters is accompanied by critical phenomena at critical concentrations.
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17
Total citations:
17
Citations from 2024:
1
(5%)
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GOST
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Kozyukhin S. et al. Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1 // Canadian Journal of Physics. 2014. Vol. 92. No. 7-8. pp. 684-689.
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Kozyukhin S., Sherchenkov A., Babich A., Lazarenko P., Nguyen H. P., Prikhodko O. Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1 // Canadian Journal of Physics. 2014. Vol. 92. No. 7-8. pp. 684-689.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1139/cjp-2013-0607
UR - https://doi.org/10.1139/cjp-2013-0607
TI - Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1
T2 - Canadian Journal of Physics
AU - Kozyukhin, Sergey
AU - Sherchenkov, Alexey
AU - Babich, Alexey
AU - Lazarenko, Petr
AU - Nguyen, Huy Phuc
AU - Prikhodko, Oleg
PY - 2014
DA - 2014/07/01
PB - Canadian Science Publishing
SP - 684-689
IS - 7-8
VL - 92
SN - 0008-4204
SN - 1208-6045
ER -
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BibTex (up to 50 authors)
Copy
@article{2014_Kozyukhin,
author = {Sergey Kozyukhin and Alexey Sherchenkov and Alexey Babich and Petr Lazarenko and Huy Phuc Nguyen and Oleg Prikhodko},
title = {Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1},
journal = {Canadian Journal of Physics},
year = {2014},
volume = {92},
publisher = {Canadian Science Publishing},
month = {jul},
url = {https://doi.org/10.1139/cjp-2013-0607},
number = {7-8},
pages = {684--689},
doi = {10.1139/cjp-2013-0607}
}
Cite this
MLA
Copy
Kozyukhin, Sergey, et al. “Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices 1.” Canadian Journal of Physics, vol. 92, no. 7-8, Jul. 2014, pp. 684-689. https://doi.org/10.1139/cjp-2013-0607.