Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, volume 39, issue 11R, pages 6202

Fabrication of Nanoscale Cubic SiC Particle Film

Publication typeJournal Article
Publication date2000-11-01
scimago Q2
wos Q3
SJR0.307
CiteScore3.0
Impact factor1.5
ISSN00214922, 13474065
General Physics and Astronomy
General Engineering
Abstract

Nanoscale cubic SiC particle film is grown on Si substrate by hydrogen plasma sputtering of a SiC target. Before the film growth an amorphous SiC buffer layer of about 100 nm thickness is prepared on the Si substrate. By annealing the buffer layer in hydrogen atmosphere, the nanoscale cubic SiC particle film can be grown on the buffer layer on Si. Particle size, composition and crystallinity of the film depend on the composition, the crystallinity and the surface morphology of the buffer layer.

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