Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, volume 39, issue 11R, pages 6202
Fabrication of Nanoscale Cubic SiC Particle Film
Yong Sun Yong Sun
1
,
Kenta Kirimoto Kenta Kirimoto
1
,
Tatsuro Miyasato Tatsuro Miyasato
2
Publication type: Journal Article
Publication date: 2000-11-01
scimago Q2
wos Q3
SJR: 0.307
CiteScore: 3.0
Impact factor: 1.5
ISSN: 00214922, 13474065
General Physics and Astronomy
General Engineering
Abstract
Nanoscale cubic SiC particle film is grown on Si substrate by hydrogen plasma sputtering of a SiC target. Before the film growth an amorphous SiC buffer layer of about 100 nm thickness is prepared on the Si substrate. By annealing the buffer layer in hydrogen atmosphere, the nanoscale cubic SiC particle film can be grown on the buffer layer on Si. Particle size, composition and crystallinity of the film depend on the composition, the crystallinity and the surface morphology of the buffer layer.
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