том 149 издание 2 страницы H59

Thermal Hydrosilylation of Undecylenic Acid with Porous Silicon

Rabah Boukherroub 1
J. T. C. Wojtyk 1
Danial D.M. Wayner 1
David Lockwood 2
2
 
bInstitute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A 0R6
Тип публикацииJournal Article
Дата публикации2002-07-26
scimago Q1
wos Q2
БС1
SJR0.774
CiteScore6.1
Impact factor3.3
ISSN00134651, 19457111
Materials Chemistry
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Electrochemistry
Condensed Matter Physics
Renewable Energy, Sustainability and the Environment
Краткое описание
The thermal reaction of undecylenic acid with a hydrogen-terminated porous silicon surface takes place at 95°C to yield an organic monolayer covalently attached to the surface through Si-C bonds. The acid terminal group remains intact and is not affected by the chemical process. Under the same conditions, alcohols break the Si-Si back bonds of the PSi matrix. In contrast, the acid function does not react with either the Si-H or the Si-Si bonds of the PSi surface and the reaction takes place at the terminal C-C double bond of the molecule. When the reaction was carried out with decanoic acid, under the same conditions, the reaction was not complete. The functionalized surfaces were characterized using transmission infrared and X-ray photoelectron spectroscopies. The effect of the chemical process on the photoluminescence has been studied, and the stability against corrosion in 100% humidity was verified using chemography. We have demonstrated that the derivatized surface with undecylenic acid can be activated by a simple chemical route using N-hydroxysuccimide in the presence of N-ethyl-N'-(3-dimethylaminopropyl) carbodiimide hydrochloride.
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ГОСТ |
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Boukherroub R. et al. Thermal Hydrosilylation of Undecylenic Acid with Porous Silicon // Journal of the Electrochemical Society. 2002. Vol. 149. No. 2. p. H59.
ГОСТ со всеми авторами (до 50) Скопировать
Boukherroub R., Wojtyk J. T. C., Wayner D. D., Lockwood D. Thermal Hydrosilylation of Undecylenic Acid with Porous Silicon // Journal of the Electrochemical Society. 2002. Vol. 149. No. 2. p. H59.
RIS |
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TY - JOUR
DO - 10.1149/1.1432679
UR - https://doi.org/10.1149/1.1432679
TI - Thermal Hydrosilylation of Undecylenic Acid with Porous Silicon
T2 - Journal of the Electrochemical Society
AU - Boukherroub, Rabah
AU - Wojtyk, J. T. C.
AU - Wayner, Danial D.M.
AU - Lockwood, David
PY - 2002
DA - 2002/07/26
PB - The Electrochemical Society
SP - H59
IS - 2
VL - 149
SN - 0013-4651
SN - 1945-7111
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{2002_Boukherroub,
author = {Rabah Boukherroub and J. T. C. Wojtyk and Danial D.M. Wayner and David Lockwood},
title = {Thermal Hydrosilylation of Undecylenic Acid with Porous Silicon},
journal = {Journal of the Electrochemical Society},
year = {2002},
volume = {149},
publisher = {The Electrochemical Society},
month = {jul},
url = {https://doi.org/10.1149/1.1432679},
number = {2},
pages = {H59},
doi = {10.1149/1.1432679}
}
MLA
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Boukherroub, Rabah, et al. “Thermal Hydrosilylation of Undecylenic Acid with Porous Silicon.” Journal of the Electrochemical Society, vol. 149, no. 2, Jul. 2002, p. H59. https://doi.org/10.1149/1.1432679.