том 171 издание 9 страницы 92501

Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current

Тип публикацииJournal Article
Дата публикации2024-09-02
scimago Q1
wos Q2
white level БС1
SJR0.774
CiteScore6.1
Impact factor3.3
ISSN00134651, 19457111
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In this work, the effect of electrolysis modes and their parameters on the morphology of the silicon deposits on glassy carbon were studied. In direct current mode it was found that an increase in current density and deposition time changes the morphology of the silicon from a coating to a deposit with a complex surface. Scanning electron microscopy showed that silicon films produced at low current densities and a short deposition time are represented by spherical particles with a diameter of less than 1 µm. The pulse current mode made it possible to increase the cathode density of the deposition current, and the pulse current density to an average of ≈250 mA cm-2 does not lead to the formation of a large amount of dendritic deposit. It was found that a low frequency makes it possible to obtain higher-quality silicon coatings, because when the frequency increases, the coating most often does not cover the entire electrode. The high value of the duty cycle, even at low pulse current densities, always leads to the formation of dendrites. An increase in the total deposition time also leads to an increase in the amount of deposit and the formation of dendrites.

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Journal of the Electrochemical Society
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The Electrochemical Society
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Ustinova Y. et al. Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current // Journal of the Electrochemical Society. 2024. Vol. 171. No. 9. p. 92501.
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Ustinova Y., Suzdaltsev A., Zaykov Y. Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current // Journal of the Electrochemical Society. 2024. Vol. 171. No. 9. p. 92501.
RIS |
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TY - JOUR
DO - 10.1149/1945-7111/ad73a8
UR - https://iopscience.iop.org/article/10.1149/1945-7111/ad73a8
TI - Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current
T2 - Journal of the Electrochemical Society
AU - Ustinova, Yu.
AU - Suzdaltsev, A.
AU - Zaykov, Yuriy
PY - 2024
DA - 2024/09/02
PB - The Electrochemical Society
SP - 92501
IS - 9
VL - 171
SN - 0013-4651
SN - 1945-7111
ER -
BibTex |
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@article{2024_Ustinova,
author = {Yu. Ustinova and A. Suzdaltsev and Yuriy Zaykov},
title = {Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current},
journal = {Journal of the Electrochemical Society},
year = {2024},
volume = {171},
publisher = {The Electrochemical Society},
month = {sep},
url = {https://iopscience.iop.org/article/10.1149/1945-7111/ad73a8},
number = {9},
pages = {92501},
doi = {10.1149/1945-7111/ad73a8}
}
MLA
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Ustinova, Yu., et al. “Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current.” Journal of the Electrochemical Society, vol. 171, no. 9, Sep. 2024, p. 92501. https://iopscience.iop.org/article/10.1149/1945-7111/ad73a8.
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