Influence of Vanadium Doping on the Structural, Magnetic, and Shielding Features of GaFeO3

GaFe_1−xV_xO₃ samples (x = 0, 0.3) were manufactured through the solid-state reaction process. The phase singularity in each sample was tested using the search-match HighScore software. The structural/microstructural parameters of the samples were determined using the Fullprof program based on the Rietveld refinement methodology. The cation distribution across the four crystallographic sites in the GaFeO₃ lattice was determined. The integration of vanadium into the lattice results in alterations in cation distribution, inducing distortions in the bond lengths and angles of tetrahedral and octahedral structures. In general, the distortions of octahedrons tend to increase with vanadium doping. The zero field cooling (ZFC) and field cooling (FC) with an applied magnetic field of 100 Oe were performed using a SQUID device. The magnetization field dependence (M-H) of both samples at 10 K was also measured. The Curie temperatures (T _C) for both samples were determined. The magnetization of all samples demonstrates obvious hysteretic performance. The coercivity improved slightly from 1.55 kOe to 1.97 kOe, whereas the saturation and remanent magnetization reduced as GaFeO₃ was doped with 30% vanadium. A minor rise in LAC and MAC was seen at low and high photon energy ranges, whereas a small reduction in both parameters took place in the medium photon energy range after GaFeO₃ was doped with vanadium. Both HVL and TVL rose in the lesser and medium photon energy regions for vanadium-doped GaFeO₃, but this trend is inverted at higher photon energy levels. Doped sample displays the lowest mean free path (MFP) values at elevated photon energy levels relative to the GaFeO₃ sample. The effect of vanadium doping on the exposure build-up factor (EBF), energy absorption build-up factor (EABF), effective atomic number (Z _eff), and equivalence atomic number (Z _eq) parameters were also explored.