Homoepitaxial Nanostructures of Zinc Oxide

The homoepitaxial ZnO nanostructures (HENS) were obtained on different substrates using various techniques. The first type of homoepitaxial ZnO nanorod arrays was grown on Si or ITO substrates by using two alternative sequences: (a) seeding→growth from solution→growth from vapor and contrariwise (b) seeding→growth from vapor→growth from solution. As follows from transport and cathode luminescence measurements homoepitaxial growth allows enhancing electrical or luminescence properties. The second type of HENS was prepared by growth of vertically or horizontally oriented ZnO nanorod arrays depending on monocrystalline ZnO wafers with[0001]and[10-10]orientation. In all cases the growth occurs along thec-axis of fast growth.