Open Access
Optical Materials Express, volume 10, issue 5, pages 1296
Ultraviolet-B persistent luminescence and thermoluminescence of bismuth ion doped garnet phosphors
Hongxu Sun
1
,
Qingqing Gao
1
,
Aiying Wang
1
,
Yichun Liu
1
,
Xiao-Jun Wang
2
,
Feng Liu
1
Publication type: Journal Article
Publication date: 2020-04-28
Journal:
Optical Materials Express
scimago Q2
SJR: 0.662
CiteScore: 5.5
Impact factor: 2.8
ISSN: 21593930
Electronic, Optical and Magnetic Materials
Abstract
Ultraviolet persistent luminescence technology holds potential for some new applications where ultraviolet emission is needed but constant external excitation is unavailable. Despite the promising applications, not much is known about such luminescence. Here we report ultraviolet-B (290−320 nm) persistent luminescence phenomenon in isostructural Y3Ga5O12:Bi3+ and Y3Al5O12:Bi3+ phosphors. We further investigate the luminescence by measuring thermoluminescence of the two phosphors. Our spectral results indicate that conventional thermoluminescence measurement cannot directly evaluate the electron population in the traps of Y3Ga5O12:Bi3+, in which the ultraviolet emission is suppressed at high temperature due to a thermal ionization quenching. We believe that the insight of the present trap performance is transferable to other ultraviolet persistent phosphors.
Are you a researcher?
Create a profile to get free access to personal recommendations for colleagues and new articles.