Photonics Research, volume 8, issue 5, pages 630

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Sung Wen Huang Chen ¹

Yu-Ming Huang ¹

Konthoujam James Singh ¹

Yu-Chien Hsu ¹

Fang Jyun Liou ¹

Jie Song ²

Joowon Choi ²

Po Tsung Lee ¹

Chien-Chung Lin ³

Zhong Chen ⁴

Jung Han ⁵

Tingzhu Wu ⁴

Hao-Chung kuo ¹

Show full list: 13 authors

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Department of Photonics & Graduate Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan |

Saphlux Inc., Branford, Connecticut 06405, USA |

Institute of Photonic System, National Chiao Tung University, Tainan 71150, Taiwan |

⁴

Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China |

⁵

Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA |

Publication type: Journal Article

Publication date: 2020-04-15

Optica Publishing Group

Journal: Photonics Research

scimago Q1

SJR: 2.056

CiteScore: 13.6

Impact factor: 6.6

ISSN: 23279125

DOI: 10.1364/prj.388958

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Electronic, Optical and Magnetic Materials

Atomic and Molecular Physics, and Optics

Abstract

Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN μ-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar μ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A/cm2 injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar μ-LEDs’ emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020).

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