Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
Luca Sulmoni
1
,
Frank Mehnke
1
,
Anna Mogilatenko
2
,
M. Guttmann
3
,
Tim Wernicke
1
,
Michael Kneissl
1
Publication type: Journal Article
Publication date: 2020-07-31
scimago Q1
wos Q1
SJR: 1.994
CiteScore: 13.5
Impact factor: 7.2
ISSN: 23279125
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Abstract
The electrical and structural properties of V/Al-based n-contacts on n‐AlxGa1−xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated. Ohmic n-contacts are obtained up to x=0.75 with a contact resistivity of 5.7×10−4 Ω·cm2 whereas for higher Al mole fraction the IV characteristics are rectifying. Transmission electron microscopy reveals a thin crystalline AlN layer formed at the metal/semiconductor interface upon thermal annealing. Compositional analysis confirmed an Al enrichment at the interface. The interfacial nitride-based layer in n-contacts on n‐Al0.9Ga0.1N is partly amorphous and heavily contaminated by oxygen. The role and resulting limitations of Al in the metal stack for n-contacts on n-AlGaN with very high Al mole fraction are discussed. Finally, ultraviolet C (UVC) LEDs grown on n‐Al0.87Ga0.13N and emitting at 232 nm are fabricated with an operating voltage of 7.3 V and an emission power of 120 μW at 20 mA in cw operation.
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Sulmoni L. et al. Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers // Photonics Research. 2020. Vol. 8. No. 8. p. 1381.
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Sulmoni L., Mehnke F., Mogilatenko A., Guttmann M., Wernicke T., Kneissl M. Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers // Photonics Research. 2020. Vol. 8. No. 8. p. 1381.
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TY - JOUR
DO - 10.1364/prj.391075
UR - https://doi.org/10.1364/prj.391075
TI - Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
T2 - Photonics Research
AU - Sulmoni, Luca
AU - Mehnke, Frank
AU - Mogilatenko, Anna
AU - Guttmann, M.
AU - Wernicke, Tim
AU - Kneissl, Michael
PY - 2020
DA - 2020/07/31
PB - Optica Publishing Group
SP - 1381
IS - 8
VL - 8
SN - 2327-9125
ER -
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@article{2020_Sulmoni,
author = {Luca Sulmoni and Frank Mehnke and Anna Mogilatenko and M. Guttmann and Tim Wernicke and Michael Kneissl},
title = {Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers},
journal = {Photonics Research},
year = {2020},
volume = {8},
publisher = {Optica Publishing Group},
month = {jul},
url = {https://doi.org/10.1364/prj.391075},
number = {8},
pages = {1381},
doi = {10.1364/prj.391075}
}
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MLA
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Sulmoni, Luca, et al. “Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers.” Photonics Research, vol. 8, no. 8, Jul. 2020, p. 1381. https://doi.org/10.1364/prj.391075.