	1 2
Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering	Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2, 50% Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 2 publications, 50%
Russian Microelectronics	Russian Microelectronics, 1, 25% Russian Microelectronics 1 publication, 25%
Modern Electronic Materials	Modern Electronic Materials, 1, 25% Modern Electronic Materials 1 publication, 25%
	1 2

Publishers

	1 2
National University of Science & Technology (MISiS)	National University of Science & Technology (MISiS), 2, 50% National University of Science & Technology (MISiS) 2 publications, 50%
Pleiades Publishing	Pleiades Publishing, 1, 25% Pleiades Publishing 1 publication, 25%
Pensoft Publishers	Pensoft Publishers, 1, 25% Pensoft Publishers 1 publication, 25%
	1 2

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GOST |

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GOST Copy

Kislyuk A. M. et al. Formation of stable induced domains at charged domain boundary in lithium niobate using scanning probe microscopy // Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2019. Vol. 22. No. 1. pp. 5-17.

GOST all authors (up to 50) Copy

Kislyuk A. M., Ilina T. S., Kubasov I. V., Kiselev D. A., Temirov A. A., Turutin A. A., Malinkovich M. D., Polisan A. A., Parkhomenko Y. N. Formation of stable induced domains at charged domain boundary in lithium niobate using scanning probe microscopy // Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2019. Vol. 22. No. 1. pp. 5-17.

RIS |

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RIS Copy

TY - JOUR

DO - 10.17073/1609-3577-2019-1-5-17

UR - https://met.misis.ru/jour/article/view/286

TI - Formation of stable induced domains at charged domain boundary in lithium niobate using scanning probe microscopy

T2 - Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

AU - Kislyuk, Alexander M

AU - Ilina, T S

AU - Kubasov, Ilya V

AU - Kiselev, D. A.

AU - Temirov, A A

AU - Turutin, A A

AU - Malinkovich, M D

AU - Polisan, A. A.

AU - Parkhomenko, Yu. N.

PY - 2019

DA - 2019/12/09

PB - National University of Science & Technology (MISiS)

SP - 5-17

IS - 1

VL - 22

SN - 1609-3577

SN - 2413-6387

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{2019_Kislyuk,

author = {Alexander M Kislyuk and T S Ilina and Ilya V Kubasov and D. A. Kiselev and A A Temirov and A A Turutin and M D Malinkovich and A. A. Polisan and Yu. N. Parkhomenko},

title = {Formation of stable induced domains at charged domain boundary in lithium niobate using scanning probe microscopy},

journal = {Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering},

year = {2019},

volume = {22},

publisher = {National University of Science & Technology (MISiS)},

month = {dec},

url = {https://met.misis.ru/jour/article/view/286},

number = {1},

pages = {5--17},

doi = {10.17073/1609-3577-2019-1-5-17}

}

MLA

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MLA Copy

Kislyuk, Alexander M., et al. “Formation of stable induced domains at charged domain boundary in lithium niobate using scanning probe microscopy.” Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, vol. 22, no. 1, Dec. 2019, pp. 5-17. https://met.misis.ru/jour/article/view/286.

Publisher

National University of Science & Technology (MISiS)

Journal

Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering

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CiteScore

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ISSN

16093577 (Print)

24136387 (Electronic)

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