Open Access
,
volume 24
,
issue 6
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pages 943-948
Forming a thick layer of ε-Ga2O3 on the GaN sublayer with V-defects at the interface
Publication type: Journal Article
Publication date: 2024-12-01
scimago Q4
SJR: 0.155
CiteScore: 0.8
Impact factor: —
ISSN: 22261494, 25000373
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Ivanov A. Y. et al. Forming a thick layer of ε-Ga2O3 on the GaN sublayer with V-defects at the interface // Scientific and technical journal of information technologies mechanics and optics. 2024. Vol. 24. No. 6. pp. 943-948.
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Ivanov A. Y., Sharofidinov S., Iu. Panov D., Kremleva A. V., Bauman D., Romanov A. Forming a thick layer of ε-Ga2O3 on the GaN sublayer with V-defects at the interface // Scientific and technical journal of information technologies mechanics and optics. 2024. Vol. 24. No. 6. pp. 943-948.
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TY - JOUR
DO - 10.17586/2226-1494-2024-24-6-943-948
UR - https://ntv.ifmo.ru/en/article/23206/ivanov_a.yu.,_sharofidinov_sh.sh._i_dr.formirovanie_tolstogo_sloya_ε-Ga2O3_na_podsloe_GaN_s_V-defektami_na_granice_razdela .htm
TI - Forming a thick layer of ε-Ga2O3 on the GaN sublayer with V-defects at the interface
T2 - Scientific and technical journal of information technologies mechanics and optics
AU - Ivanov, Andrey Y
AU - Sharofidinov, Sh.Sh.
AU - Iu. Panov, Dmitrii
AU - Kremleva, A V
AU - Bauman, Dmitrii
AU - Romanov, A.E.
PY - 2024
DA - 2024/12/01
PB - ITMO University
SP - 943-948
IS - 6
VL - 24
SN - 2226-1494
SN - 2500-0373
ER -
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@article{2024_Ivanov,
author = {Andrey Y Ivanov and Sh.Sh. Sharofidinov and Dmitrii Iu. Panov and A V Kremleva and Dmitrii Bauman and A.E. Romanov},
title = {Forming a thick layer of ε-Ga2O3 on the GaN sublayer with V-defects at the interface},
journal = {Scientific and technical journal of information technologies mechanics and optics},
year = {2024},
volume = {24},
publisher = {ITMO University},
month = {dec},
url = {https://ntv.ifmo.ru/en/article/23206/ivanov_a.yu.,_sharofidinov_sh.sh._i_dr.formirovanie_tolstogo_sloya_ε-Ga2O3_na_podsloe_GaN_s_V-defektami_na_granice_razdela .htm},
number = {6},
pages = {943--948},
doi = {10.17586/2226-1494-2024-24-6-943-948}
}
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MLA
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Ivanov, Andrey Y., et al. “Forming a thick layer of ε-Ga2O3 on the GaN sublayer with V-defects at the interface.” Scientific and technical journal of information technologies mechanics and optics, vol. 24, no. 6, Dec. 2024, pp. 943-948. https://ntv.ifmo.ru/en/article/23206/ivanov_a.yu.,_sharofidinov_sh.sh._i_dr.formirovanie_tolstogo_sloya_ε-Ga2O3_na_podsloe_GaN_s_V-defektami_na_granice_razdela .htm.
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