Open Access
Open access
International Journal of Automation Technology, volume 12, issue 2, pages 154-159

Characteristics and Mechanism of Catalyst-Referred Etching Method: Application to 4H-SiC

Bui P.V., Sano Y., Morikawa Y., Yamauchi K.
Publication typeJournal Article
Publication date2018-03-01
scimago Q2
SJR0.404
CiteScore2.1
Impact factor0.9
ISSN18817629, 18838022
Mechanical Engineering
Industrial and Manufacturing Engineering
Abstract

A novel abrasive-free planarization method named catalyst-referred etching (CARE) was developed. A polishing pad is coated with a catalytic material to promote chemical etching of the work substrate. During processing, the topmost areas of the work substrate, which are in contact with the catalyst surface, are selectively etched off. Atomically highly ordered surfaces are obtained for many types of work substrates. In this paper, the removal characteristics and mechanism of CARE for single crystalline 4H-SiC are reviewed.

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