International Journal of Self-Propagating High-Temperature Synthesis, volume 33, issue 4, pages 319-323
Self-Propagating High-Temperature Synthesis of SiC-Doped Cu2Se Compound: Thermoelectric Properties
G R Nigmatullina
1
,
D Yu Kovalev
1
,
A. V. KARPOV
1
Publication type: Journal Article
Publication date: 2024-12-01
scimago Q4
wos Q4
SJR: 0.180
CiteScore: 1.0
Impact factor: 0.5
ISSN: 10613862, 1934788X
Abstract
Cu2Se thermoelectric compound containing up to 5 wt % SiC was prepared via self-propagating high-temperature synthesis. Doping SiC was shown to improve the thermoelectric properties and get 20% increase in the electrical conductivity and 60% increase in the Seebeck coefficient. The thermoelectric power factor of Cu2Se–5 wt % SiC was found to be 14.4 μW cm–1 K–2 at 900 K, which is 3 times higher than that of Cu2Se.
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