Open Access
Open access
volume 12 issue 2 pages 191

High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication

Dong Li 1
Chicheng Ma 1
Junfei Wang 1
Fangchen Hu 1
Yuqi Hou 1
Shanshan Wang 1
Junhui Hu 1
Shulan Yi 1
Yingnan Ma 1
Jianyang Shi 1, 2, 3
Junwen Zhang 1, 2, 3, 4
Ziwei Li 1, 2, 3, 4
Nan Chi Nan 1, 2, 3, 4
Liang Xia 5
Chao Shen 1, 2, 3, 4
2
 
Shanghai Engineering Research Center of Low-Earth-Orbit Satellite Communication and Applications, Shanghai 200438, China
3
 
Shanghai Collaborative Innovation Center of Low-Earth-Orbit Satellite Communication Technology, Shanghai 200438, China
5
 
China Mobile Research Institute, Beijing 100053, China
Publication typeJournal Article
Publication date2022-01-27
scimago Q2
wos Q2
SJR0.486
CiteScore5.0
Impact factor2.4
ISSN20734352, 01725076
Inorganic Chemistry
General Chemical Engineering
Condensed Matter Physics
General Materials Science
Abstract

Visible light communication (VLC) is a promising technology for next-generation high-speed optical wireless data links. Among various transmitters, GaN-based superluminescent diodes (SLDs) show interesting characteristics, including a large modulation bandwidth, droop free and low speckle noise, which makes them attractive for VLC applications. In this work, we design and fabricate a blue-emitting SLD utilizing tilted facet configuration. Using SLD as the light source, a VLC system is experimentally demonstrated. A record data rate of 4.57 gigabit per second (Gbps) is achieved with adaptive bit-loading discrete multiple tone (DMT) modulation, while the highest modulation format reaches 256 quadrature amplitude modulation (QAM). The corresponding bit error rate (BER) is ~3.5 × 10−3, which is below the forward error correction (FEC) threshold of 3.8 × 10−3.

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GOST |
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GOST Copy
Li D. et al. High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication // Crystals. 2022. Vol. 12. No. 2. p. 191.
GOST all authors (up to 50) Copy
Li D., Ma C., Wang J., Hu F., Hou Y., Wang S., Hu J., Yi S., Ma Y., Shi J., Zhang J., Li Z., Chi Nan N., Xia L., Shen C. High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication // Crystals. 2022. Vol. 12. No. 2. p. 191.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.3390/cryst12020191
UR - https://doi.org/10.3390/cryst12020191
TI - High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication
T2 - Crystals
AU - Li, Dong
AU - Ma, Chicheng
AU - Wang, Junfei
AU - Hu, Fangchen
AU - Hou, Yuqi
AU - Wang, Shanshan
AU - Hu, Junhui
AU - Yi, Shulan
AU - Ma, Yingnan
AU - Shi, Jianyang
AU - Zhang, Junwen
AU - Li, Ziwei
AU - Chi Nan, Nan
AU - Xia, Liang
AU - Shen, Chao
PY - 2022
DA - 2022/01/27
PB - MDPI
SP - 191
IS - 2
VL - 12
SN - 2073-4352
SN - 0172-5076
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2022_Li,
author = {Dong Li and Chicheng Ma and Junfei Wang and Fangchen Hu and Yuqi Hou and Shanshan Wang and Junhui Hu and Shulan Yi and Yingnan Ma and Jianyang Shi and Junwen Zhang and Ziwei Li and Nan Chi Nan and Liang Xia and Chao Shen},
title = {High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication},
journal = {Crystals},
year = {2022},
volume = {12},
publisher = {MDPI},
month = {jan},
url = {https://doi.org/10.3390/cryst12020191},
number = {2},
pages = {191},
doi = {10.3390/cryst12020191}
}
MLA
Cite this
MLA Copy
Li, Dong, et al. “High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication.” Crystals, vol. 12, no. 2, Jan. 2022, p. 191. https://doi.org/10.3390/cryst12020191.