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Open access
Materials, volume 17, issue 19, pages 4931

Synthesis of β-Ga2O3:Mg Thin Films by Electron Beam Evaporation and Postannealing

Publication typeJournal Article
Publication date2024-10-09
Journal: Materials
scimago Q2
SJR0.565
CiteScore5.8
Impact factor3.1
ISSN19961944
PubMed ID:  39410499
Abstract

Doping divalent metal cations into Ga2O3 films plays a key role in adjusting the conductive behavior of the film. N-type high-resistivity β-Ga2O3:Mg films were prepared using electron beam evaporation and subsequent postannealing processing. Various characterization methods (X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence, etc.) revealed that the Mg content plays an important role in affecting the film quality. Specifically, when the Mg content in the film is 3.6%, the S2 film’s resistivity, carrier content, and carrier mobility are 59655.5 Ω·cm, 1.95 × 1014 cm3/C, and 0.53682 cm2/Vs. Also, the film exhibits a smoother surface, more refined grains, and higher self-trapped exciton emission efficiency. The Mg cation mainly substitutes the Ga+ cation at a tetrahedral site, acting as a trap for self-trapped holes.

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