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Applied Sciences (Switzerland), volume 11, issue 11, pages 5020

Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite

Publication typeJournal Article
Publication date2021-05-28
Q2
Q2
SJR0.508
CiteScore5.3
Impact factor2.5
ISSN20763417
Computer Science Applications
Process Chemistry and Technology
General Materials Science
Instrumentation
General Engineering
Fluid Flow and Transfer Processes
Abstract

In this study, we demonstrate solution-processed memristor devices using a CdSe/ZnS colloidal quantum dot (CQD)/poly(methyl methacrylate) (PMMA) composite and their electrical characteristics were investigated. Particularly, to obtain stable memristive characteristics with a large current switching ratio, the concentration of CdSe/ZnS QDs in the PMMA matrix was optimized. It was found that with the CdSe/ZnS QD concentration of 1 wt%, the memristor device exhibited a high current switching ratio of ~104 and a retention time over 104 s, owing to the efficient charge trapping and de-trapping during the set and reset processes, respectively. In addition, we investigated the operational stability of the device by carrying out the cyclic endurance test and it was found that the memristor device showed stable switching behavior up to 400 cycles. Furthermore, by analyzing the conduction behavior of the memristor device, we have deduced the possible mechanisms for the degradation of the switching characteristics over long switching cycles. Specifically, it was observed that the dominant conduction mechanism changed from trap-free space charge-limited current conduction to trap charge-limited current conduction, indicating the creation of additional trap states during the repeated operation, disturbing the memristive operation.

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GOST Copy
Kim M. et al. Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite // Applied Sciences (Switzerland). 2021. Vol. 11. No. 11. p. 5020.
GOST all authors (up to 50) Copy
Kim M., Oh S., Song S., Kim J., Kim Y. H. Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite // Applied Sciences (Switzerland). 2021. Vol. 11. No. 11. p. 5020.
RIS |
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RIS Copy
TY - JOUR
DO - 10.3390/app11115020
UR - https://doi.org/10.3390/app11115020
TI - Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite
T2 - Applied Sciences (Switzerland)
AU - Kim, Minho
AU - Oh, Seongkeun
AU - Song, Seungho
AU - Kim, Ji-Wan
AU - Kim, Yong Hoon
PY - 2021
DA - 2021/05/28
PB - MDPI
SP - 5020
IS - 11
VL - 11
SN - 2076-3417
ER -
BibTex |
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BibTex (up to 50 authors) Copy
@article{2021_Kim,
author = {Minho Kim and Seongkeun Oh and Seungho Song and Ji-Wan Kim and Yong Hoon Kim},
title = {Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite},
journal = {Applied Sciences (Switzerland)},
year = {2021},
volume = {11},
publisher = {MDPI},
month = {may},
url = {https://doi.org/10.3390/app11115020},
number = {11},
pages = {5020},
doi = {10.3390/app11115020}
}
MLA
Cite this
MLA Copy
Kim, Minho, et al. “Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite.” Applied Sciences (Switzerland), vol. 11, no. 11, May. 2021, p. 5020. https://doi.org/10.3390/app11115020.
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