Open Access
Advanced AlGaAs/GaAs heterostructures grown by MOVPE
Maxim A Ladugin
1
,
Irina V Yarotskaya
1
,
Timur A Bagaev
1
,
Konstantin Yu Telegin
1
,
Andrey Yu Andreev
1
,
Ivan I Zasavitskii
2
,
Anatoliy A Padalitsa
1
,
Alexander A Marmalyuk
1
1
Sigm Plus Co., 3 Vvedenskogo str., Moscow 117342, Russia
|
Publication type: Journal Article
Publication date: 2019-06-14
scimago Q2
wos Q2
SJR: 0.486
CiteScore: 5.0
Impact factor: 2.4
ISSN: 20734352, 01725076
Inorganic Chemistry
General Chemical Engineering
Condensed Matter Physics
General Materials Science
Abstract
AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500–2000 layers.
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19
Total citations:
19
Citations from 2024:
5
(26%)
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MLA
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GOST
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Ladugin M. A. et al. Advanced AlGaAs/GaAs heterostructures grown by MOVPE // Crystals. 2019. Vol. 9. No. 6. p. 305.
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Ladugin M. A., Yarotskaya I. V., Bagaev T. A., Telegin K. Yu., Andreev A. Yu., Zasavitskii I. I., Padalitsa A. A., Marmalyuk A. A. Advanced AlGaAs/GaAs heterostructures grown by MOVPE // Crystals. 2019. Vol. 9. No. 6. p. 305.
Cite this
RIS
Copy
TY - JOUR
DO - 10.3390/cryst9060305
UR - https://doi.org/10.3390/cryst9060305
TI - Advanced AlGaAs/GaAs heterostructures grown by MOVPE
T2 - Crystals
AU - Ladugin, Maxim A
AU - Yarotskaya, Irina V
AU - Bagaev, Timur A
AU - Telegin, Konstantin Yu
AU - Andreev, Andrey Yu
AU - Zasavitskii, Ivan I
AU - Padalitsa, Anatoliy A
AU - Marmalyuk, Alexander A
PY - 2019
DA - 2019/06/14
PB - MDPI
SP - 305
IS - 6
VL - 9
SN - 2073-4352
SN - 0172-5076
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2019_Ladugin,
author = {Maxim A Ladugin and Irina V Yarotskaya and Timur A Bagaev and Konstantin Yu Telegin and Andrey Yu Andreev and Ivan I Zasavitskii and Anatoliy A Padalitsa and Alexander A Marmalyuk},
title = {Advanced AlGaAs/GaAs heterostructures grown by MOVPE},
journal = {Crystals},
year = {2019},
volume = {9},
publisher = {MDPI},
month = {jun},
url = {https://doi.org/10.3390/cryst9060305},
number = {6},
pages = {305},
doi = {10.3390/cryst9060305}
}
Cite this
MLA
Copy
Ladugin, Maxim A., et al. “Advanced AlGaAs/GaAs heterostructures grown by MOVPE.” Crystals, vol. 9, no. 6, Jun. 2019, p. 305. https://doi.org/10.3390/cryst9060305.