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Crystals

, том 9 , издание 6 , страницы 305

Advanced AlGaAs/GaAs heterostructures grown by MOVPE

Тип публикации: Journal Article

Дата публикации: 2019-06-14

MDPI

Crystals

scimago Q2

wos Q2

БС2

SJR: 0.486

CiteScore: 5.0

Impact factor: 2.4

ISSN: 20734352, 01725076

DOI: 10.3390/cryst9060305

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Inorganic Chemistry

General Chemical Engineering

Condensed Matter Physics

General Materials Science

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AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500–2000 layers.

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Нижегородский государственный университет им. Н.И. Лобачевского

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Ladugin M. A. et al. Advanced AlGaAs/GaAs heterostructures grown by MOVPE // Crystals. 2019. Vol. 9. No. 6. p. 305.

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Ladugin M. A., Yarotskaya I. V., Bagaev T. A., Telegin K. Yu., Andreev A. Yu., Zasavitskii I. I., Padalitsa A. A., Marmalyuk A. A. Advanced AlGaAs/GaAs heterostructures grown by MOVPE // Crystals. 2019. Vol. 9. No. 6. p. 305.

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TY - JOUR

DO - 10.3390/cryst9060305

UR - https://doi.org/10.3390/cryst9060305

TI - Advanced AlGaAs/GaAs heterostructures grown by MOVPE

T2 - Crystals

AU - Ladugin, Maxim A

AU - Yarotskaya, Irina V

AU - Bagaev, Timur A

AU - Telegin, Konstantin Yu

AU - Andreev, Andrey Yu

AU - Zasavitskii, Ivan I

AU - Padalitsa, Anatoliy A

AU - Marmalyuk, Alexander A

PY - 2019

DA - 2019/06/14

PB - MDPI

SP - 305

IS - 6

VL - 9

SN - 2073-4352

SN - 0172-5076

ER -

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@article{2019_Ladugin,

author = {Maxim A Ladugin and Irina V Yarotskaya and Timur A Bagaev and Konstantin Yu Telegin and Andrey Yu Andreev and Ivan I Zasavitskii and Anatoliy A Padalitsa and Alexander A Marmalyuk},

title = {Advanced AlGaAs/GaAs heterostructures grown by MOVPE},

journal = {Crystals},

year = {2019},

volume = {9},

publisher = {MDPI},

month = {jun},

url = {https://doi.org/10.3390/cryst9060305},

number = {6},

pages = {305},

doi = {10.3390/cryst9060305}

}

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Ladugin, Maxim A., et al. “Advanced AlGaAs/GaAs heterostructures grown by MOVPE.” Crystals, vol. 9, no. 6, Jun. 2019, p. 305. https://doi.org/10.3390/cryst9060305.

Издатель

MDPI

Журнал

Crystals

scimago Q2

wos Q2

БС2

SJR

0.486

CiteScore

5.0

Impact factor

2.4

ISSN

20734352 (Print, Electronic)

01725076 (Print)

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