Open Access
Materials, volume 15, issue 12, pages 4084
Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study
Publication type: Journal Article
Publication date: 2022-06-08
PubMed ID:
35744141
General Materials Science
Abstract
At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the structural, electronic, and electrically conductive properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. It is shown that the proposed atomic configurations of tr-B/GaN and tr-B/ZnO heterostructures are energetically stable and are characterized by a gapless band structure in contrast to the semiconductor character of GaN and ZnO monolayers. We find the phenomenon of charge transfer from tr-B to GaN and ZnO monolayers, which predetermines the key role of borophene in the formation of the features of the electronic structure of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. The results of the calculation of the current–voltage (I–V) curves reveal that tr-B/GaN and tr-B/ZnO van der Waals heterostructures are characterized by the phenomenon of current anisotropy: the current along the zigzag edge of the ZnO/GaN monolayers is five times greater than along the armchair edge of these monolayers. Moreover, the heterostructures show good stability of current to temperature change at small voltage. These findings demonstrate that r-B/GaN and tr-B/ZnO vdW heterostructures are promising candidates for creating the element base of nanoelectronic devices, in particular, a conducting channel in field-effect transistors.
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Materials
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2 publications, 22.22%
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1 publication, 11.11%
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Citations by publishers
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Multidisciplinary Digital Publishing Institute (MDPI)
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Multidisciplinary Digital Publishing Institute (MDPI)
4 publications, 44.44%
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Elsevier
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3 publications, 33.33%
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IOP Publishing
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IOP Publishing
1 publication, 11.11%
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Wiley
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Wiley
1 publication, 11.11%
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- We do not take into account publications that without a DOI.
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- Statistics recalculated weekly.
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Slepchenkov M. M. et al. Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study // Materials. 2022. Vol. 15. No. 12. p. 4084.
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Slepchenkov M. M., Kolosov D. A., Glukhova O. E. Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study // Materials. 2022. Vol. 15. No. 12. p. 4084.
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TY - JOUR
DO - 10.3390/ma15124084
UR - https://doi.org/10.3390%2Fma15124084
TI - Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study
T2 - Materials
AU - Kolosov, Dmitry A.
AU - Slepchenkov, Michael M.
AU - Glukhova, Olga E.
PY - 2022
DA - 2022/06/08 00:00:00
PB - Multidisciplinary Digital Publishing Institute (MDPI)
SP - 4084
IS - 12
VL - 15
PMID - 35744141
SN - 1996-1944
ER -
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@article{2022_Slepchenkov,
author = {Dmitry A. Kolosov and Michael M. Slepchenkov and Olga E. Glukhova},
title = {Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study},
journal = {Materials},
year = {2022},
volume = {15},
publisher = {Multidisciplinary Digital Publishing Institute (MDPI)},
month = {jun},
url = {https://doi.org/10.3390%2Fma15124084},
number = {12},
pages = {4084},
doi = {10.3390/ma15124084}
}
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Slepchenkov, Michael M., et al. “Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study.” Materials, vol. 15, no. 12, Jun. 2022, p. 4084. https://doi.org/10.3390%2Fma15124084.
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