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Nanomaterials, volume 11, issue 8, pages 1949

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Fedorov Vladimir V 1, 2
Berdnikov Yury 1, 3
Sibirev Nickolay V 3
Dvoretckaia Liliia N 1
Cirlin G.E. 1
Tchernycheva Maria 6
Mukhin Ivan S. 1, 3, 7
Publication typeJournal Article
Publication date2021-07-28
Journal: Nanomaterials
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor5.3
ISSN20794991
PubMed ID:  34443778
General Chemical Engineering
General Materials Science
Abstract

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

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Fedorov V. V. et al. Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates // Nanomaterials. 2021. Vol. 11. No. 8. p. 1949.
GOST all authors (up to 50) Copy
Fedorov V. V., Berdnikov Y., Sibirev N. V., Bolshakov A. P., Fedina S. V., Sapunov G. A., Dvoretckaia L. N., Cirlin G., Kirilenko D., Tchernycheva M., Mukhin I. S. Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates // Nanomaterials. 2021. Vol. 11. No. 8. p. 1949.
RIS |
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RIS Copy
TY - JOUR
DO - 10.3390/nano11081949
UR - https://doi.org/10.3390%2Fnano11081949
TI - Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
T2 - Nanomaterials
AU - Fedorov, Vladimir V
AU - Sibirev, Nickolay V
AU - Dvoretckaia, Liliia N
AU - Tchernycheva, Maria
AU - Berdnikov, Yury
AU - Sapunov, Georgiy A
AU - Bolshakov, Alexey P.
AU - Fedina, Sergey V
AU - Cirlin, G.E.
AU - Kirilenko, D.A.
AU - Mukhin, Ivan S.
PY - 2021
DA - 2021/07/28 00:00:00
PB - Multidisciplinary Digital Publishing Institute (MDPI)
SP - 1949
IS - 8
VL - 11
PMID - 34443778
SN - 2079-4991
ER -
BibTex |
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BibTex Copy
@article{2021_Fedorov,
author = {Vladimir V Fedorov and Nickolay V Sibirev and Liliia N Dvoretckaia and Maria Tchernycheva and Yury Berdnikov and Georgiy A Sapunov and Alexey P. Bolshakov and Sergey V Fedina and G.E. Cirlin and D.A. Kirilenko and Ivan S. Mukhin},
title = {Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates},
journal = {Nanomaterials},
year = {2021},
volume = {11},
publisher = {Multidisciplinary Digital Publishing Institute (MDPI)},
month = {jul},
url = {https://doi.org/10.3390%2Fnano11081949},
number = {8},
pages = {1949},
doi = {10.3390/nano11081949}
}
MLA
Cite this
MLA Copy
Fedorov, Vladimir V., et al. “Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates.” Nanomaterials, vol. 11, no. 8, Jul. 2021, p. 1949. https://doi.org/10.3390%2Fnano11081949.
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