Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.
Citations by journals
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Nanomaterials
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Nanomaterials
2 publications, 25%
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Nanoscale
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Nanoscale
2 publications, 25%
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ACS Applied Energy Materials
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ACS Applied Energy Materials
1 publication, 12.5%
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European Physical Journal Plus
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European Physical Journal Plus
1 publication, 12.5%
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Materials Today Communications
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Materials Today Communications
1 publication, 12.5%
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2
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Citations by publishers
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Multidisciplinary Digital Publishing Institute (MDPI)
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Multidisciplinary Digital Publishing Institute (MDPI)
2 publications, 25%
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Royal Society of Chemistry (RSC)
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Royal Society of Chemistry (RSC)
2 publications, 25%
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American Chemical Society (ACS)
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American Chemical Society (ACS)
1 publication, 12.5%
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Springer Nature
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Springer Nature
1 publication, 12.5%
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Elsevier
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Elsevier
1 publication, 12.5%
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