Open Access
Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
Vladimir V Fedorov
1, 2
,
Yury Berdnikov
1, 3
,
Nickolay V Sibirev
3
,
Alexey P. Bolshakov
1, 4
,
Sergey V Fedina
1
,
Liliia N Dvoretckaia
1
,
G.E. Cirlin
1
,
D.A. Kirilenko
5
,
Maria Tchernycheva
6
,
Ivan S. Mukhin
1, 3, 7
Publication type: Journal Article
Publication date: 2021-07-28
PubMed ID:
34443778
General Chemical Engineering
General Materials Science
Abstract
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.
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Metrics
19
Total citations:
19
Citations from 2024:
12
(63%)
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MLA
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GOST
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Fedorov V. V. et al. Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates // Nanomaterials. 2021. Vol. 11. No. 8. p. 1949.
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Fedorov V. V., Berdnikov Y., Sibirev N. V., Bolshakov A. P., Fedina S. V., Sapunov G. A., Dvoretckaia L. N., Cirlin G., Kirilenko D., Tchernycheva M., Mukhin I. S. Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates // Nanomaterials. 2021. Vol. 11. No. 8. p. 1949.
Cite this
RIS
Copy
TY - JOUR
DO - 10.3390/nano11081949
UR - https://doi.org/10.3390/nano11081949
TI - Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
T2 - Nanomaterials
AU - Fedorov, Vladimir V
AU - Berdnikov, Yury
AU - Sibirev, Nickolay V
AU - Bolshakov, Alexey P.
AU - Fedina, Sergey V
AU - Sapunov, Georgiy A
AU - Dvoretckaia, Liliia N
AU - Cirlin, G.E.
AU - Kirilenko, D.A.
AU - Tchernycheva, Maria
AU - Mukhin, Ivan S.
PY - 2021
DA - 2021/07/28
PB - MDPI
SP - 1949
IS - 8
VL - 11
PMID - 34443778
SN - 2079-4991
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2021_Fedorov,
author = {Vladimir V Fedorov and Yury Berdnikov and Nickolay V Sibirev and Alexey P. Bolshakov and Sergey V Fedina and Georgiy A Sapunov and Liliia N Dvoretckaia and G.E. Cirlin and D.A. Kirilenko and Maria Tchernycheva and Ivan S. Mukhin},
title = {Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates},
journal = {Nanomaterials},
year = {2021},
volume = {11},
publisher = {MDPI},
month = {jul},
url = {https://doi.org/10.3390/nano11081949},
number = {8},
pages = {1949},
doi = {10.3390/nano11081949}
}
Cite this
MLA
Copy
Fedorov, Vladimir V., et al. “Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates.” Nanomaterials, vol. 11, no. 8, Jul. 2021, p. 1949. https://doi.org/10.3390/nano11081949.