Open Access
Open access
Japan Society of Applied Physics
Applied Physics Express
,  volume 16 ,  issue 3 ,  pages 31002

The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage

Publication type: Journal Article
Publication date: 2023-03-01
Japan Society of Applied Physics
scimago Q2
wos Q3
SJR: 0.427
CiteScore: 4.7
Impact factor: 2.2
ISSN: 18820778, 18820786
General Physics and Astronomy
General Engineering
Abstract

In this work, the insertion of AlScN ferroelectric gate dielectric on the performance of the AlGaN/GaN HEMT device is investigated. With negative pre-poling on AlScN, the threshold voltage (V th) of the device shifts positively with a swing range of 3.26 V. The influence of polarization modulation is also reflected by the suppression of gate leakage and the reduction of the subthreshold swing of the device. The AlScN-integrated GaN HEMT exhibits an on/off ratio of 106 and a subthreshold swing of 80 mV dec−1. The depletion mechanism of 2DEG at the AlGaN/GaN interface was well described by a TCAD model.

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GOST |
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GOST Copy
Zhao Z. et al. The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage // Applied Physics Express. 2023. Vol. 16. No. 3. p. 31002.
GOST all authors (up to 50) Copy
Zhao Z., Dai Y., Meng F., Liu W., Liu K., Luo T., Yu Z., Wang Q., Yang Z., Zhang J., Guo W., Wu L., Ye J. The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage // Applied Physics Express. 2023. Vol. 16. No. 3. p. 31002.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.35848/1882-0786/acbe26
UR - https://doi.org/10.35848/1882-0786/acbe26
TI - The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage
T2 - Applied Physics Express
AU - Zhao, Zihui
AU - Dai, Ying
AU - Meng, Fanping
AU - Liu, Wenjun
AU - Liu, Kunzi
AU - Luo, Tianzhi
AU - Yu, Zhehan
AU - Wang, Qikun
AU - Yang, Zhenhai
AU - Zhang, Jijun
AU - Guo, Wei
AU - Wu, Liang
AU - Ye, Jichun
PY - 2023
DA - 2023/03/01
PB - Japan Society of Applied Physics
SP - 31002
IS - 3
VL - 16
SN - 1882-0778
SN - 1882-0786
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2023_Zhao,
author = {Zihui Zhao and Ying Dai and Fanping Meng and Wenjun Liu and Kunzi Liu and Tianzhi Luo and Zhehan Yu and Qikun Wang and Zhenhai Yang and Jijun Zhang and Wei Guo and Liang Wu and Jichun Ye},
title = {The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage},
journal = {Applied Physics Express},
year = {2023},
volume = {16},
publisher = {Japan Society of Applied Physics},
month = {mar},
url = {https://doi.org/10.35848/1882-0786/acbe26},
number = {3},
pages = {31002},
doi = {10.35848/1882-0786/acbe26}
}
MLA
Cite this
MLA Copy
Zhao, Zihui, et al. “The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage.” Applied Physics Express, vol. 16, no. 3, Mar. 2023, p. 31002. https://doi.org/10.35848/1882-0786/acbe26.