Low Power Restoration Circuits Reduce Swing Voltages of SRAM Cell With Improved Read and Write Margins

Publication type: Journal Article
Publication date: 2021-07-26
IGI Global
SJR: —
CiteScore: —
Impact factor: —
ISSN: 26437937, 26437945
General Materials Science
Abstract

This paper examines the factors that affect the static noise margin (SNM) of static random access memories which focus on optimizing read and write operation of 8T SRAM cell which is better than 6T SRAM cell using swing restoration for dual node voltage. New 8T SRAM technique on the circuit or architecture level is required. In this paper, comparative analysis of 6T and 8T SRAM cells with improved read and write margin is done for 130nm technology with cadence virtuoso schematics tool.

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Kumar V., Rawat R. M. Low Power Restoration Circuits Reduce Swing Voltages of SRAM Cell With Improved Read and Write Margins // International Journal of Security and Privacy in Pervasive Computing. 2021. Vol. 13. No. 2. pp. 16-28.
GOST all authors (up to 50) Copy
Kumar V., Rawat R. M. Low Power Restoration Circuits Reduce Swing Voltages of SRAM Cell With Improved Read and Write Margins // International Journal of Security and Privacy in Pervasive Computing. 2021. Vol. 13. No. 2. pp. 16-28.
RIS |
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RIS Copy
TY - JOUR
DO - 10.4018/ijsppc.2021040102
UR - https://doi.org/10.4018/ijsppc.2021040102
TI - Low Power Restoration Circuits Reduce Swing Voltages of SRAM Cell With Improved Read and Write Margins
T2 - International Journal of Security and Privacy in Pervasive Computing
AU - Kumar, Vinod
AU - Rawat, Ram Murti
PY - 2021
DA - 2021/07/26
PB - IGI Global
SP - 16-28
IS - 2
VL - 13
SN - 2643-7937
SN - 2643-7945
ER -
BibTex |
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BibTex (up to 50 authors) Copy
@article{2021_Kumar,
author = {Vinod Kumar and Ram Murti Rawat},
title = {Low Power Restoration Circuits Reduce Swing Voltages of SRAM Cell With Improved Read and Write Margins},
journal = {International Journal of Security and Privacy in Pervasive Computing},
year = {2021},
volume = {13},
publisher = {IGI Global},
month = {jul},
url = {https://doi.org/10.4018/ijsppc.2021040102},
number = {2},
pages = {16--28},
doi = {10.4018/ijsppc.2021040102}
}
MLA
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Kumar, Vinod, and Ram Murti Rawat. “Low Power Restoration Circuits Reduce Swing Voltages of SRAM Cell With Improved Read and Write Margins.” International Journal of Security and Privacy in Pervasive Computing, vol. 13, no. 2, Jul. 2021, pp. 16-28. https://doi.org/10.4018/ijsppc.2021040102.