Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
Mads E Ingebrigtsen
1
,
Lasse Vines
1
,
Giovanni Alfieri
2
,
Andrei Mihaila
2
,
Uwe Badstübner
2
,
Bengt Gunnar Svensson
1
,
Andrej Kuznetsov
1
2
ABB Corporate Resarch
Publication type: Journal Article
Publication date: 2017-05-15
scimago Q4
SJR: 0.158
CiteScore: 1.2
Impact factor: —
ISSN: 02555476, 16629752
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
Electrical properties of Schottky contacts of high work-function metals (Pd, Au, and Ni) on (010) and (201) oriented β-Ga2O3 were investigated. Current-voltage characteristics reveal that all the contacts exhibit high rectifying behavior with ideality factors as low as 1.04. However, the reverse leakage currents were lower in the (010) samples compared to the (201) ones. Thermal admittance spectroscopy confirms a main charge carrier level to be at ~0.15 eV below the conduction band edge (Ec). Secondary ion mass spectrometry indicates that Si may be responsible for this donor level. Deep level transient spectroscopy reveals four levels (E1-E4) in the upper part of the band gap, with the corresponding energy level positions at 0.56, 0.76, 1.01, and 1.48 eV below Ec.
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Ingebrigtsen M. E. et al. Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects // Materials Science Forum. 2017. Vol. 897. pp. 755-758.
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Ingebrigtsen M. E., Vines L., Alfieri G., Mihaila A., Badstübner U., Svensson B. G., Kuznetsov A. Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects // Materials Science Forum. 2017. Vol. 897. pp. 755-758.
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TY - JOUR
DO - 10.4028/www.scientific.net/msf.897.755
UR - https://doi.org/10.4028/www.scientific.net/msf.897.755
TI - Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
T2 - Materials Science Forum
AU - Ingebrigtsen, Mads E
AU - Vines, Lasse
AU - Alfieri, Giovanni
AU - Mihaila, Andrei
AU - Badstübner, Uwe
AU - Svensson, Bengt Gunnar
AU - Kuznetsov, Andrej
PY - 2017
DA - 2017/05/15
PB - Trans Tech Publications
SP - 755-758
VL - 897
SN - 0255-5476
SN - 1662-9752
ER -
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@article{2017_Ingebrigtsen,
author = {Mads E Ingebrigtsen and Lasse Vines and Giovanni Alfieri and Andrei Mihaila and Uwe Badstübner and Bengt Gunnar Svensson and Andrej Kuznetsov},
title = {Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects},
journal = {Materials Science Forum},
year = {2017},
volume = {897},
publisher = {Trans Tech Publications},
month = {may},
url = {https://doi.org/10.4028/www.scientific.net/msf.897.755},
pages = {755--758},
doi = {10.4028/www.scientific.net/msf.897.755}
}