том 9 издание 5 страницы 430-441

Using the features of the photoelastic effect to measure the parameters of optoelectronic devices

Aphig Hasanov 1
Ruslan Hasanov 1
Asad Rustamov 1
Rovchan Ahmadov 1
Masud Sadikhov 1
Тип публикацииJournal Article
Дата публикации2021-11-20
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ISSN23074469, 13147617, 23675632
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The features of the photoelastic effect are discussed and it is shown that they can be used to measure the parameters of a laser and a photodetector, which are the main units of any optoelectronic product. A brief review of the known methods for measuring the parameters of a laser and a photodetector is carried out, and some limitations in their application are noted. The possibility of using the features of the photoelastic effect for measuring the parameters of the inertia of the photodetector is theoretically substantiated. A formula for calculating the response at the output of an acousto-optic processor to a rectangular input action is derived and used to separately estimate the time of crossing the optical beam by an elastic wave packet and the inertia of the photodetector. It has also been proven that by choosing a short input action, the features of the photoelastic effect can be used to determine the configuration of the cross section of the laser beam and the law of the distribution of the power flux density in it. The results of theoretical studies have been tested by numerical calculations and confirmed by experimental measurements.

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Hasanov A. et al. Using the features of the photoelastic effect to measure the parameters of optoelectronic devices // ADVANCES IN APPLIED PHYSICS. 2021. Vol. 9. No. 5. pp. 430-441.
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Hasanov A., Hasanov R., Rustamov A., Ahmadov R., Sadikhov M. Using the features of the photoelastic effect to measure the parameters of optoelectronic devices // ADVANCES IN APPLIED PHYSICS. 2021. Vol. 9. No. 5. pp. 430-441.
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TY - JOUR
DO - 10.51368/2307-4469-2021-9-5-430-441
UR - https://doi.org/10.51368/2307-4469-2021-9-5-430-441
TI - Using the features of the photoelastic effect to measure the parameters of optoelectronic devices
T2 - ADVANCES IN APPLIED PHYSICS
AU - Hasanov, Aphig
AU - Hasanov, Ruslan
AU - Rustamov, Asad
AU - Ahmadov, Rovchan
AU - Sadikhov, Masud
PY - 2021
DA - 2021/11/20
PB - Joint-Stock Company Scientific and Production Association - ORION
SP - 430-441
IS - 5
VL - 9
SN - 2307-4469
SN - 1314-7617
SN - 2367-5632
ER -
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@article{2021_Hasanov,
author = {Aphig Hasanov and Ruslan Hasanov and Asad Rustamov and Rovchan Ahmadov and Masud Sadikhov},
title = {Using the features of the photoelastic effect to measure the parameters of optoelectronic devices},
journal = {ADVANCES IN APPLIED PHYSICS},
year = {2021},
volume = {9},
publisher = {Joint-Stock Company Scientific and Production Association - ORION},
month = {nov},
url = {https://doi.org/10.51368/2307-4469-2021-9-5-430-441},
number = {5},
pages = {430--441},
doi = {10.51368/2307-4469-2021-9-5-430-441}
}
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Hasanov, Aphig, et al. “Using the features of the photoelastic effect to measure the parameters of optoelectronic devices.” ADVANCES IN APPLIED PHYSICS, vol. 9, no. 5, Nov. 2021, pp. 430-441. https://doi.org/10.51368/2307-4469-2021-9-5-430-441.