Solid phase epitaxy formation of silicon-GaSb based heterostructures
Publication type: Journal Article
Publication date: 2017-01-01
SJR: —
CiteScore: —
Impact factor: —
ISSN: 27582450
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L. Goroshko D. et al. Solid phase epitaxy formation of silicon-GaSb based heterostructures // JJAP Conference Proceedings. 2017. Vol. 5. p. 11108.
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L. Goroshko D., A. Chusovitin E., M. Chernev I., V. Shevlyagin A., N. Galkin K., G. Galkin N. Solid phase epitaxy formation of silicon-GaSb based heterostructures // JJAP Conference Proceedings. 2017. Vol. 5. p. 11108.
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TY - JOUR
DO - 10.56646/jjapcp.5.0_011108
UR - https://www.jstage.jst.go.jp/article/jjapcp/5/0/5_011108/_article
TI - Solid phase epitaxy formation of silicon-GaSb based heterostructures
T2 - JJAP Conference Proceedings
AU - L. Goroshko, Dmitry
AU - A. Chusovitin, Evgeniy
AU - M. Chernev, Igor
AU - V. Shevlyagin, Alexander
AU - N. Galkin, Konstantin
AU - G. Galkin, Nikolay
PY - 2017
DA - 2017/01/01
PB - The Japan Society of Applied Physics
SP - 11108
VL - 5
SN - 2758-2450
ER -
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@article{2017_L. Goroshko,
author = {Dmitry L. Goroshko and Evgeniy A. Chusovitin and Igor M. Chernev and Alexander V. Shevlyagin and Konstantin N. Galkin and Nikolay G. Galkin},
title = {Solid phase epitaxy formation of silicon-GaSb based heterostructures},
journal = {JJAP Conference Proceedings},
year = {2017},
volume = {5},
publisher = {The Japan Society of Applied Physics},
month = {jan},
url = {https://www.jstage.jst.go.jp/article/jjapcp/5/0/5_011108/_article},
pages = {11108},
doi = {10.56646/jjapcp.5.0_011108}
}