Formation and properties of crystalline BaSi2 thin films obtained by solid phase epitaxy on Si(111)
Dmitry Fomin
1
,
Viktor Dubov
1
,
Konstantin Galkin
2
,
Nikolay Galkin
2
,
Rafael Batalov
3
,
Vladimir Shustov
3
Publication type: Journal Article
Publication date: 2017-01-01
SJR: —
CiteScore: —
Impact factor: —
ISSN: 27582450
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Fomin D. et al. Formation and properties of crystalline BaSi2 thin films obtained by solid phase epitaxy on Si(111) // JJAP Conference Proceedings. 2017. Vol. 5. p. 11203.
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Fomin D., Dubov V., Galkin K., Galkin N., Batalov R., Shustov V. Formation and properties of crystalline BaSi2 thin films obtained by solid phase epitaxy on Si(111) // JJAP Conference Proceedings. 2017. Vol. 5. p. 11203.
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TY - JOUR
DO - 10.56646/jjapcp.5.0_011203
UR - https://www.jstage.jst.go.jp/article/jjapcp/5/0/5_011203/_article
TI - Formation and properties of crystalline BaSi2 thin films obtained by solid phase epitaxy on Si(111)
T2 - JJAP Conference Proceedings
AU - Fomin, Dmitry
AU - Dubov, Viktor
AU - Galkin, Konstantin
AU - Galkin, Nikolay
AU - Batalov, Rafael
AU - Shustov, Vladimir
PY - 2017
DA - 2017/01/01
PB - The Japan Society of Applied Physics
SP - 11203
VL - 5
SN - 2758-2450
ER -
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@article{2017_Fomin,
author = {Dmitry Fomin and Viktor Dubov and Konstantin Galkin and Nikolay Galkin and Rafael Batalov and Vladimir Shustov},
title = {Formation and properties of crystalline BaSi2 thin films obtained by solid phase epitaxy on Si(111)},
journal = {JJAP Conference Proceedings},
year = {2017},
volume = {5},
publisher = {The Japan Society of Applied Physics},
month = {jan},
url = {https://www.jstage.jst.go.jp/article/jjapcp/5/0/5_011203/_article},
pages = {11203},
doi = {10.56646/jjapcp.5.0_011203}
}